86--136 6733 2386
quality Silicon PNP transistor BLUE ROCKET MMBT5401T suitable for high voltage amplification applications factory
quality Silicon PNP transistor BLUE ROCKET MMBT5401T suitable for high voltage amplification applications factory

Silicon PNP transistor BLUE ROCKET MMBT5401T suitable for high voltage amplification applications

Key Attributes
Model Number: MMBT5401T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5401T
Package:
SOT-89
Product Description

Product Overview

The MMBT5401T is a Silicon PNP transistor designed for general-purpose high-voltage amplification. It features high breakdown voltage and serves as a complementary pair with the MMBT5551T. This transistor is housed in a SOT-89 plastic package.

Product Attributes

  • Brand: FSB (implied by datasheet URL)
  • Package Type: SOT-89 Plastic Package
  • Transistor Type: PNP Silicon

Technical Specifications

General Purpose High Voltage Amplifier

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO -180 V
Collector to Emitter Voltage VCEO -160 V
Emitter to Base Voltage VEBO -6.0 V
Collector Current - Continuous IC -600 mA
Collector Power Dissipation PC 500 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut-Off Current ICBO VCB=-180V, IE=0 -0.1 A
Emitter Base Cut-Off Current IEBO VEB=-6.0V, IC=0 -0.1 A
DC Current Gain hFE(1) VCE=-5.0V, IC=-10mA 50 400
hFE(2) VCE=-5.0V, IC=-50mA 20 70
Collector to Emitter Saturation Voltage VCE(sat)(1) IC=-10mA, IB=-1.0mA -0.12 -0.4 V
Collector to Emitter Saturation Voltage VCE(sat)(2) IC=-50mA, IB=-5.0mA -0.5 -0.8 V
Emitter to Base Saturation Voltage VBE(sat)(1) IC=-10mA, IB=-1.0mA -0.75 -1.0 V
Emitter to Base Saturation Voltage VBE(sat)(2) IC=-50mA, IB=-5.0mA -0.8 -1.0 V
Emitter to Base Voltage VBE VCE=-5.0V, IC=-10mA -0.7 -0.75 V
Transition Frequency fT VCE=-10V, IE=10mA 50 80 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=10MHz 2.5 5.0 pF
Turn-on Time ton IC=-100mA, -IB1=IB2=-10mA 0.1 s
Turn-off Time toff 0.2 s
Storage Time tstg 0.1 s

hFE Classifications

Class hFE Range Marking
A 50150 H2LA
B 100300 H2LB
C 200400 H2LC

Marking Instructions

  • H: Company Code
  • 2L: Product Type
  • A, B, C: hFE Classifications
  • **: Lot No. Code (changes with Lot No.)

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Inner Box) Dimension (Outer Box)
SOT-89 (Reel) 1,000 7 7,000 8 56,000 180120180 mm 385257392 mm

Temperature Profile for IR Reflow Soldering (Pb-Free)

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2455, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temperature: 2605
  • Time: 101 sec.

2403121714_BLUE-ROCKET-MMBT5401T_C22356954.pdf

Related Products
quality Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing factory
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
quality General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification factory
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.