N Channel Power MOSFET Bestirpower BMT65N065UC1 Ideal for Telecommunications and Server Power Supplies
Key Attributes
Model Number:
BMT65N065UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
55A
RDS(on):
65mΩ@23.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
3.99nF@100V
Pd - Power Dissipation:
500W
Gate Charge(Qg):
73nC
Mfr. Part #:
BMT65N065UC1
Package:
TOLL
Product Description
Bestirpower BMT65N065UC1 N-Channel Power MOSFET
Product Overview
The Bestirpower BMT65N065UC1 is an N-Channel Power MOSFET designed with advanced super junction technology, offering very low on-resistance and gate charge for high efficiency. Its optimized charge coupling technology and user-friendly design contribute to low EMI and reduced switching losses. This MOSFET is ideal for applications such as PC power supplies, server power supplies, telecommunications, solar inverters, and automotive super chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Diode: Ultra-fast body diode
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain to Source Voltage1) | 650 | V | |||
| VGSS | Gate to Source Voltage | ±30 | V | |||
| ID | Drain Current2) Continuous (TC = 25) | 55 | A | |||
| ID | Drain Current2) Continuous (TC = 125) | A | ||||
| IDM | Drain Current Pulsed (TC = 25) | 165 | A | |||
| EAS | Single Pulsed Avalanche Energy3) | 1000 | mJ | |||
| IAR | Avalanche Current | 6 | A | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt4) | 50 | |||||
| Ptot | Power Dissipation (TC = 25) | 500 | W | |||
| dif/dt | Maximum diode commutation speed4) | 500 | A/μs | |||
| TJ , TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| IS | Continuous diode forward current TC=25°C | 55 | A | |||
| IS,pulse | Diode pulse current2) TC=25°C | 165 | A | |||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case, Max. | 0.25 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient, Max. | 62 | °C/W | |||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | °C | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, Tj = 25°C | 10 | μA | ||
| IGSS | Gate-Source Leakage Current | VGS = ±30 V, VDS = 0 V | ±100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS , ID = 1 mA | 2.8 | 4.8 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23.5 A, TJ = 25°C | 58 | 65 | mΩ | |
| RG | Gate resistance | VDD=0 V,VGS=0 V,F=1MHz | 3.5 | Ω | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0 V, VDS = 100V, f = 250 kHz | 3990 | pF | ||
| Coss | Output Capacitance | 120 | pF | |||
| Co(tr) | Time Related Output Capacitance1) | VDS = 0 to 400 V, VGS = 0 V | 637 | pF | ||
| Co(er) | Energy Related Output Capacitance2) | 125 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDD = 400 V, ID = 25 A, VGS = 0 to 10 V | 73 | nC | ||
| Qgs | Gate to Source Charge | 18 | nC | |||
| Qgd | Gate to Drain “Miller” Charge | 23 | nC | |||
| Vplateau | Gate plateau voltage | 4.5 | V | |||
| Crss | Reverse Transfer Capacitance | 5 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 23 A, VGS = 10 V | 66 | ns | ||
| tr | Turn-On Rise Time | 79 | ns | |||
| td(off) | Turn-Off Delay Time | 139 | ns | |||
| tf | Turn-Off Fall Time | 12 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 23 A, Tf = 25°C | 0.9 | V | ||
| trr | Reverse Recovery Time | VR=400V, IF=23A, diF/dt=100A/μs | 165 | ns | ||
| Qrr | Reverse Recovery Charge | 1.9 | μC | |||
| Irrm | Peak reverse recovery current | 22 | A | |||
| Package and Packing | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BMT65N065UC1 | BMT65N065UC1 | TOLL | Tape and Reel | 1200 Units | ||
1) Limited by Tj max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by Tj,max.
3) VDD=50V, RG=25Ω, Starting Tj=25°C.
4) VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG.
2504101957_Bestirpower-BMT65N065UC1_C46472753.pdf
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