Super junction power mosfet Bestirpower BMD60N190C1 offering low on resistance and gate charge for power

Key Attributes
Model Number: BMD60N190C1
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.3pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
152W
Input Capacitance(Ciss):
1.69nF@50V
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
BMD60N190C1
Package:
DPAK
Product Description

Bestirpower BMD60N190C1 Super Junction Power MOSFET

Product Overview

The Bestirpower BMD60N190C1 is a Super Junction Power MOSFET utilizing bestirpowers advanced super junction technology. This design enables very low on-resistance and gate charge, leading to significantly higher efficiency through optimized charge coupling technology. These user-friendly devices offer designers the advantage of Low EMI and low switching loss, making them suitable for a wide range of power applications.

Applications

  • PC power
  • Server power supply
  • Telecom
  • Solar inverter
  • Super charger for automobiles

Features

  • Extremely low losses due to very low FOM (Rdson*Qg and Eoss)
  • Very high commutation ruggedness

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
BVDSS Drain to Source Voltage 600 V
VGSS Gate to Source Voltage 30 V
ID Drain Current VGS = 10 V, (TC = 25) 20 A
ID Drain Current VGS = 10 V, (TC = 100) A
IDM Drain Current Pulsed 60 A
EAS Single Pulsed Avalanche Energy 282 mJ
IAR Avalanche Current 7.5 A
dv/dt MOSFET dv/dt 50 V/ns
Peak Diode Recovery dv/dt 50 V/ns
PD Power Dissipation (TC = 25) W
TJ , TSTG Operating and Storage Temperature Range -55 150
TL Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds 260
Thermal Characteristics
RJC Thermal Resistance, Junction to Case, Max. 0.82 /W
RJA Thermal Resistance, Junction to Ambient, Max. 62 /W
12
152
Electrical Characteristics
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA 600 V
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V, TJ = 25 1 A
IGSS Gate-Source Leakage Current VGS = 30 V, VDS = 0 V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 2.5 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 23 A, TJ = 25 160 190 m
Ciss Input Capacitance VGS = 0 V, VDS = 50V, f = 250 kHz 1690 pF
Coss Output Capacitance 78 pF
Crss Reverse transfer capacitance 3.3 pF
Co(tr) Time Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 245 pF
Co(er) Energy Related Output Capacitance 50 pF
Qg(tot) Total Gate Charge at 10 V VDD= 400 V, ID = 7 A, VGS = 0 to 10 V 40 nC
Qgs Gate to Source Charge 9 nC
Qgd Gate to Drain Miller Charge 17 nC
Vplateau Gate plateau voltage 6 V
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400 V, ID = 7 A, VGS = 10 V 64 ns
tr Turn-On Rise Time 16 ns
td(off) Turn-Off Delay Time 55 ns
tf Turn-Off Fall Time 14 ns
Source-Drain Diode Characteristics
VSD Diode Forward Voltage VGS = 0 V, IF = 10A, TJ = 25 0.85 V
trr Reverse Recovery Time VR = 400 V, IF = 10A, diF/dt = 100 A/s 320 ns
Qrr Reverse Recovery Charge 2.5 C
Irrm Peak reverse recovery current 14 A
RG Gate resistance f = 1 MHz open drain 7

Product Attributes

  • Brand: Bestirpower
  • Model: BMD60N190C1
  • Technology: Super Junction Power MOSFET
  • Package: TO252-3

Package Marking and Ordering Information

Part Number Top Marking Package Packing Method Quantity
BMD60N190C1 BMD60N190C1 TO252-3 Tape & Reel 2500 units

2508071805_Bestirpower-BMD60N190C1_C50153975.pdf

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