Super junction power mosfet Bestirpower BMD60N190C1 offering low on resistance and gate charge for power
Bestirpower BMD60N190C1 Super Junction Power MOSFET
Product Overview
The Bestirpower BMD60N190C1 is a Super Junction Power MOSFET utilizing bestirpowers advanced super junction technology. This design enables very low on-resistance and gate charge, leading to significantly higher efficiency through optimized charge coupling technology. These user-friendly devices offer designers the advantage of Low EMI and low switching loss, making them suitable for a wide range of power applications.
Applications
- PC power
- Server power supply
- Telecom
- Solar inverter
- Super charger for automobiles
Features
- Extremely low losses due to very low FOM (Rdson*Qg and Eoss)
- Very high commutation ruggedness
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain to Source Voltage | 600 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current | VGS = 10 V, (TC = 25) | 20 | A | ||
| ID | Drain Current | VGS = 10 V, (TC = 100) | A | |||
| IDM | Drain Current Pulsed | 60 | A | |||
| EAS | Single Pulsed Avalanche Energy | 282 | mJ | |||
| IAR | Avalanche Current | 7.5 | A | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt | 50 | V/ns | ||||
| PD | Power Dissipation | (TC = 25) | W | |||
| TJ , TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.82 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | |||
| 12 | ||||||
| 152 | ||||||
| Electrical Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 600 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V, TJ = 25 | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.5 | 4.5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23 A, TJ = 25 | 160 | 190 | m | |
| Ciss | Input Capacitance | VGS = 0 V, VDS = 50V, f = 250 kHz | 1690 | pF | ||
| Coss | Output Capacitance | 78 | pF | |||
| Crss | Reverse transfer capacitance | 3.3 | pF | |||
| Co(tr) | Time Related Output Capacitance | VDS = 0 V to 400 V, VGS = 0 V | 245 | pF | ||
| Co(er) | Energy Related Output Capacitance | 50 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDD= 400 V, ID = 7 A, VGS = 0 to 10 V | 40 | nC | ||
| Qgs | Gate to Source Charge | 9 | nC | |||
| Qgd | Gate to Drain Miller Charge | 17 | nC | |||
| Vplateau | Gate plateau voltage | 6 | V | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 7 A, VGS = 10 V | 64 | ns | ||
| tr | Turn-On Rise Time | 16 | ns | |||
| td(off) | Turn-Off Delay Time | 55 | ns | |||
| tf | Turn-Off Fall Time | 14 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 10A, TJ = 25 | 0.85 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF = 10A, diF/dt = 100 A/s | 320 | ns | ||
| Qrr | Reverse Recovery Charge | 2.5 | C | |||
| Irrm | Peak reverse recovery current | 14 | A | |||
| RG | Gate resistance | f = 1 MHz open drain | 7 | |||
Product Attributes
- Brand: Bestirpower
- Model: BMD60N190C1
- Technology: Super Junction Power MOSFET
- Package: TO252-3
Package Marking and Ordering Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMD60N190C1 | BMD60N190C1 | TO252-3 | Tape & Reel | 2500 units |
2508071805_Bestirpower-BMD60N190C1_C50153975.pdf
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