Silicon Carbide N Channel MOSFET Bestirpower BCW65N45M1 Suitable for Industrial Power and ESS UPS Systems
Key Attributes
Model Number:
BCW65N45M1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.1pF
Input Capacitance(Ciss):
1.048nF
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
56nC
Mfr. Part #:
BCW65N45M1
Package:
TO-247
Product Description
Product Overview
The BCW65N45M1 is a 650 V, 42 A N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. Key applications include solar inverters, ESS, UPS, EV charging stations, server and telecom power supplies, and industrial power supplies. The device is 100% avalanche tested and is Halogen Free and RoHS Compliant.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Channel Type: N-Channel
- Certifications: Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| BCW65N45M1 N-Channel Silicon Carbide Power MOSFET | ||||||
| Symbol | Parameter | Value | Unit | |||
|---|---|---|---|---|---|---|
| Applications | ||||||
| Solar inverter / ESS / UPS, EV charging station, Server & Telecom power, Industrial power supply | ||||||
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 650 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 / +22 | V | |||
| VGSop | Recommended Operation Value | -5 / +18 | V | |||
| ID | Drain Current VGS = 18 V, (TC = 25) | 42 | A | |||
| ID | Drain Current VGS = 18 V, (TC = 100) | 30 | A | |||
| IDM | Drain Current Pulsed (Note1) | 117 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 175 | ||||
| Features | ||||||
| High switching speed with a low gate charge, Fast intrinsic diode with low reverse recovery, Robust Avalanche Capability, 100% Avalanche Tested, Halogen Free, and RoHS Compliant | ||||||
| Benefits | ||||||
| System efficiency improvement, Higher frequency applicability, Increased power density, Reduced cooling effort | ||||||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | ||||||
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, TJ = 175 | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 7 mA | 1.8 | 2.8 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 20 A | 45 | 63 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 20 A, TJ = 175 | 59 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 20 A | 13.4 | S | ||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0V, f = 1 MHz | 1048 | pF | ||
| Coss | Output Capacitance | 131 | pF | |||
| Crss | Reverse Capacitance | 9.1 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 400 V, VGS = 0 V | 13.0 | J | ||
| Co(er) | Energy Related Output Capacitance | 162.0 | pF | |||
| Co(tr) | Time Related Output Capacitance | 236 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load | 56 | nC | ||
| Qgs | Gate to Source Charge | 14 | nC | |||
| Qgd | Gate to Drain Miller Charge | 15 | nC | |||
| RG | Internal Gate Resistance | f = 1MHz, VAC=30mV | 4.0 | |||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH65S012D1, Inductive load | 13 | ns | ||
| tr | Turn-On Rise Time | 10 | ns | |||
| td(off) | Turn-Off Delay Time | 26 | ns | |||
| tf | Turn-Off Fall Time | 5 | ns | |||
| Eon | Turn-on Switching Energy | 27 | J | |||
| Eoff | Turn-off Switching Energy | 18 | J | |||
| Etot | Total Switching Energy | 45 | J | |||
| IS | Maximum Continuous Diode Forward Current | 42 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 117 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 20 A | 4.2 | V | ||
| trr | Reverse Recovery Time | VDD = 400 V, ISD = 20 A, dIF/dt = 1000 A/s, Includes QOSS | 17 | ns | ||
| Qrr | Reverse Recovery Charge | 104 | nC | |||
| Irrm | Peak Reverse Recovery Current | 10 | A | |||
| Thermal Characteristics | ||||||
| Symbol | Parameter | Value | Unit | |||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.0 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Package Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BCW65N45M1 | BCW65N45M1 | TO247-3L | Tube | 30 units | ||
2505291610_Bestirpower-BCW65N45M1_C47715867.pdf
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