Low EMI Super Junction MOSFET Bestirpower BMD65N360E2 compliant with Halogen Free and RoHS standards
Key Attributes
Model Number:
BMD65N360E2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
360mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Number:
1 N-channel
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
801pF
Output Capacitance(Coss):
28pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
BMD65N360E2
Package:
DPAK
Product Description
Product Overview
The BMD65N360E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantages of low EMI and reduced switching losses. Ideal for demanding applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), and chargers, this device is 100% avalanche tested and compliant with Halogen Free and RoHS standards.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Certifications: Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| BVDSS @ TJ,max | Drain to Source Voltage | 700 | V | ||||
| ID | Drain Current (continuous) | VGS=10V, TC = 25 | 11 | A | Fig 10 | ||
| ID | Drain Current (continuous) | VGS=10V,TC = 100 | 7.4 | A | |||
| IDM | Drain Current Pulsed | 33 | A | Note1 | |||
| EAS | Single Pulsed Avalanche Energy | 245 | mJ | Note2 | |||
| IAS | Avalanche Current | 7 | A | Note2 | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | ||||
| Peak Diode Recovery dv/dt | 15 | V/ns | Note3 | ||||
| PD | Power Dissipation | (TC = 25) Derate Above 25 | 114 | W | Fig 11 | ||
| 0.9 | W/ | ||||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | ||||
| Thermal Characteristics | |||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.1 | /W | ||||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | ||||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | |||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | |||||||
| Off Characteristics | |||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250 uA | 650 | - | - | V | Fig 7 |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | - | - | 1 | A | |
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | - | - | 100 | nA | |
| On Characteristics | |||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250 uA | 2.0 | 3.0 | 4.0 | V | Fig 9 |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 4.8 A, TJ = 25 | - | 325 | 360 | m | Fig 3 |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 4.8 A, TJ = 150 | - | 813 | 900 | m | Fig 8 |
| Dynamic Characteristics | |||||||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0 V, f = 1 MHz | - | 801 | - | pF | Fig 5 |
| Coss | Output Capacitance | - | 28 | - | pF | ||
| Crss | Reverse transfer capacitance | - | 3.8 | - | pF | ||
| Qg(tot) | Total Gate Charge at 10 V | VDS = 400 V, ID=5.5 A, VGS = 10 V | - | 19 | - | nC | Fig 6 |
| Qgs | Gate to Source Charge | - | 2.9 | - | nC | ||
| Qgd | Gate to Drain Miller Charge | - | 9.7 | - | nC | ||
| RG | Gate Resistance | f = 1 MHz, Open Drain | - | 5.6 | - | ||
| Switching Characteristics | |||||||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 | - | 16 | - | ns | |
| tr | Turn-On Rise Time | - | 6 | - | ns | ||
| td(off) | Turn-Off Delay Time | - | 29 | - | ns | ||
| tf | Turn-Off Fall Time | - | 22 | - | ns | ||
| Source-Drain Diode Characteristics | |||||||
| IS | Maximum Continuous Diode Forward Current | - | - | 11 | A | ||
| ISM | Maximum Pulsed Diode Forward Current | - | - | 33 | A | ||
| VSD | Diode Forward Voltage | VGS = 0 V, ISD = 11 A | - | 0.9 | 1.2 | V | Fig 4 |
| trr | Reverse Recovery Time | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s | - | 198 | - | ns | |
| Qrr | Reverse Recovery Charge | - | 1.93 | - | C | ||
| Model: BMD65N360E2 | |||||||
| Voltage Rating | 650 | V | |||||
| On-Resistance | 360 | m | |||||
| Gate Charge (typ) | 19 | nC | |||||
2506162235_Bestirpower-BMD65N360E2_C49164821.pdf
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