N Channel Power MOSFET Bestirpower BMD60N600C1 Designed for Low EMI and High Commutation Ruggedness
Key Attributes
Model Number:
BMD60N600C1
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.3pF
Number:
1 N-channel
Input Capacitance(Ciss):
370pF
Output Capacitance(Coss):
23pF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
BMD60N600C1
Package:
DPAK
Product Description
Product Overview
The Bestirpower BMD60N600C1 is a high-performance N-Channel Power MOSFET designed with advanced super junction technology. It offers extremely low losses due to a very low Figure of Merit (FOM) of Rdson*Qg and Eoss, along with very high commutation ruggedness. Optimized charge coupling technology ensures high efficiency, while Low EMI and low switching loss provide advantages for designers. This MOSFET is suitable for applications such as PFC, SPWM, LCD TV, Lighting, and UPS.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Package Type: D-Pak
- Packing Method: Tape & Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage1) | 600 | V | |||
| VGSS | Gate to Source Voltage | ±30 | V | |||
| ID | Drain Current Continuous (TC = 25) | 8 | A | |||
| ID | Drain Current Continuous (TC = 125) | 3.3 | A | |||
| IDM | Drain Current Pulsed | 24 | A | |||
| PD | Power Dissipation | 62.5 | W | |||
| EAS | Single Pulsed Avalanche Energy3) | 81 | mJ | |||
| dv/dt | MOSFET dv/dt ruggedness | 50 | V/ns | |||
| Diode Recovery dv/dt | ruggedness4) | 15 | V/ns | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Maximum Operating Junction Temperature | 150 | ||||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, max | TC = 25°C | 2 | °C/W | ||
| RJA | Thermal Resistance, Junction to Ambient, max | TC = 25°C | 62 | °C/W | ||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250µA | 600 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V, TJ=25°C | - | - | 1 | µA |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V, TJ=150°C | - | - | 10 | µA |
| IGSS | Gate-Source Leakage Current | VGS = ±20 V, VDS = 0 V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250µA | 2 | 4 | - | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 3.5A, TJ=25°C | - | 500 | 600 | mΩ |
| Ciss | Input Capacitance | VGS=0V, VDS=50V, f = 1MHz | - | 370 | - | pF |
| Coss | Output Capacitance | - | 23 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 1.3 | - | pF | |
| Qg | Total Gate Charge | VGS = 0-10V, VDD =480V, ID = 4A | - | 15 | - | nC |
| Qgs | Gate to Source Charge | - | 2.4 | - | nC | |
| Qgd | Gate to Drain “Miller” Charge | - | 9 | - | nC | |
| Vplateau | Gate plateau voltage | - | 6 | - | V | |
| RG | Gate Resistance | VGS = 0V, f = 1MHz | - | 3.6 | - | Ω |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 400V, ID=4A | - | 18 | - | ns |
| tr | Turn-On Rise Time | - | 12 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 50 | - | ns | |
| tf | Turn-Off Fall Time | - | 16 | - | ns | |
| Reverse Diode Characteristics | ||||||
| ISD | Continuous Diode Forward Current | - | - | 8 | A | |
| VSD | Diode Forward Voltage | VGS = 0V, IF = 4A, Tf = 25°C | - | 0.86 | - | V |
| trr | Reverse Recovery Time | VR=400V, IF=4A, diF/dt = 100A/µs | - | 200 | - | ns |
| Qrr | Reverse Recovery Charge | - | 1.25 | - | µC | |
| Irrm | Reverse Recovery Current | - | 14 | - | A | |
| Co(er) | Energy Related Output Capacitance1) | VDS = 0V to 400V, VGS = 0V | - | 16 | - | pF |
| Co(tr) | Time Related Output Capacitance2) | VDS = 0V to 400V, VGS = 0V | - | 87 | - | pF |
| Package Marking and Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Reel Size | Tape Width | Quantity |
| BMD60N600C1 | BMD60N600C1 | D-Pak | Tape & Reel | 330 mm | 16 mm | 2500 units |
1) Limited by TJ max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by TJ,max.
3) VDD=50V, RG=25Ω, Starting TJ=25°C.
4) VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high switch with identical RG.
2504101957_Bestirpower-BMD60N600C1_C46472750.pdf
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