1200 Volt 100 Amp N Channel Silicon Carbide MOSFET with High Switching Speed Bestirpower BCBF120N21M1
Key Attributes
Model Number:
BCBF120N21M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
21mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.741nF
Pd - Power Dissipation:
469W
Gate Charge(Qg):
198nC
Mfr. Part #:
BCBF120N21M1
Package:
TO-263-7L
Product Description
Product Overview
The BCBF120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200 V drain-to-source voltage and a continuous drain current of 100 A, with a low on-resistance of 21 m. This MOSFET provides significant benefits including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. It is engineered for robust avalanche capability and is 100% avalanche tested. Ideal for solar inverters, EV charging stations, UPS systems, and industrial power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: N-Channel Power MOSFET
- Certifications: Pb-free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| Model | BCBF120N21M1 | - | - |
| Drain to Source Voltage (VDSS) | 1200 | V | - |
| Gate to Source Voltage (VGS, DC) | -10 / +22 | V | - |
| Recommended Gate to Source Voltage (VGSop) | -5 / +18 | V | - |
| Drain Current (ID) | 100 | A | VGS = 18 V, TC = 25 |
| Drain Current (ID) | 71 | A | VGS = 18 V, TC = 100 |
| Drain Current Pulsed (IDM) | 250 | A | Note 1 |
| Power Dissipation (PD) | 469 | W | TC = 25 |
| Derate Above 25 | 3.1 | W/ | - |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 175 | - | |
| Thermal Resistance, Junction to Case (RJC, Max.) | 0.32 | /W | - |
| Thermal Resistance, Junction to Ambient (RJA, Max.) | 40 | /W | - |
| Soldering Temperature (Tsold) | 260 | Wave soldering at leads only | |
| Drain to Source Breakdown Voltage (BVDSS) | 1200 | V | VGS = 0 V, ID = 1 mA, Tc=25 |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 1200 V, VGS = 0 V, TJ = 25 |
| Zero Gate Voltage Drain Current (IDSS) | 100 | A | VDS = 1200 V, VGS = 0 V, TJ = 175 |
| Gate-Source Leakage Current (IGSS) | +100 | nA | VGS = +22 V, VDS = 0 V |
| Gate-Source Leakage Current (IGSS) | -100 | nA | VGS = -10 V, VDS = 0 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.5 | V | VGS = VDS, ID = 17 mA (tested after VGS = 22 V, 1 ms pulse) |
| Static Drain to Source On Resistance (RDS(on)) | 21 - 29.4 | m | VGS = 18 V, ID = 50 A, TJ = 25 |
| Static Drain to Source On Resistance (RDS(on)) | 33.6 | m | VGS = 18 V, ID = 50 A, TJ = 175 |
| Transconductance (gfs) | 24.4 | S | VDS = 20 V, ID = 50 A |
| Input Capacitance (Ciss) | 3741 | pF | VDS = 800 V, VGS = 0V, f = 250 kHz |
| Output Capacitance (Coss) | 224 | pF | - |
| Reverse Capacitance (Crss) | 17 | pF | - |
| Stored Energy in Output Capacitance (Eoss) | 93 | J | VDS = 0 V to 800 V, VGS = 0 V |
| Energy Related Output Capacitance (Co(er)) | 291 | pF | - |
| Time Related Output Capacitance (Co(tr)) | 456 | pF | - |
| Total Gate Charge (Qg(tot)) | 198 | nC | VDS = 800 V, ID = 50 A, VGS = -5 V / 18 V, Inductive load |
| Gate to Source Charge (Qgs) | 48 | nC | - |
| Gate to Drain Miller Charge (Qgd) | 65 | nC | - |
| Internal Gate Resistance (RG) | 3.0 | f = 1 MHz | |
| Turn-On Delay Time (td(on)) | 29 | ns | VDS = 800 V, ID = 50 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S020D1, Inductive load |
| Turn-On Rise Time (tr) | 29 | ns | - |
| Turn-Off Delay Time (td(off)) | 62 | ns | - |
| Turn-Off Fall Time (tf) | 12 | ns | - |
| Turn-on Switching Energy (Eon) | 477 | J | - |
| Turn-off Switching Energy (Eoff) | 342 | J | - |
| Total Switching Energy (Etot) | 819 | J | - |
| Maximum Continuous Diode Forward Current (IS) | 100 | A | - |
| Maximum Pulsed Diode Forward Current (ISM) | 250 | A | - |
| Diode Forward Voltage (VSD) | 4.2 | V | VGS = -5 V, ISD = 50 A |
| Reverse Recovery Time (trr) | 22 | ns | VDD = 800 V, ISD = 50 A, dIF/dt = 3000 A/s, Includes Qoss |
| Reverse Recovery Charge (Qrr) | 482 | nC | - |
| Applications | Solar inverter, EV charging station, UPS, Industrial power supply | - | - |
2509021810_Bestirpower-BCBF120N21M1_C51346557.pdf
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