High speed switching transistor BLUE ROCKET BRMJE172D suitable for audio amplification applications
Key Attributes
Model Number:
BRMJE172D
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
12.5W
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
BRMJE172D
Package:
TO-252
Product Description
Product Overview
The BRMJE172D is a high-speed switching Silicon PNP transistor housed in a TO-252 plastic package. It is designed for low power audio amplification and low current, high-speed switching applications. Key features include fast switching speed.
Product Attributes
- Brand: BR (implied by marking)
- Product Type: MJE172
- Package Type: TO-252 Plastic Package
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Collector to Base Voltage | VCBO | -100 | V | ||||
| Collector to Emitter Voltage | VCEO | -80 | V | ||||
| Emitter to Base Voltage | VEBO | -7.0 | V | ||||
| Collector Current - Continuous | IC | -3.0 | A | ||||
| Collector Current - Continuous (Peak) | ICP | -6.0 | A | ||||
| Base Current - Continuous | IB | -1.0 | A | ||||
| Collector Power Dissipation (Ambient) | PC | 1.5 | W | ||||
| Collector Power Dissipation (Case Temp=25) | PC(Tc=25) | 12.5 | W | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature Range | Tstg | -55150 | |||||
| Electrical Characteristics (Ta=25) | |||||||
| Collector to Emitter Breakdown Voltage | VCEO | -80 | V | IC=-10mA, IB=0 | |||
| Collector Cut-Off Current | ICBO | -0.1 | A | VCB=-100V, IE=0 | |||
| Emitter Cut-Off Current | IEBO | -0.1 | A | VEB=-7.0V, IC=0 | |||
| DC Current Gain (hFE) | hFE(1) | VCE=-1.0V, IC=-100mA | 50 | 300 | |||
| DC Current Gain (hFE) | hFE(2) | VCE=-1.0V, IC=-500mA | 30 | ||||
| DC Current Gain (hFE) | hFE(3) | VCE=-1.0V, IC=-1.5A | 12 | ||||
| Collector to Emitter Saturation Voltage | VCE(sat)(1) | -0.3 | V | IC=-500mA, IB=-50mA | |||
| Collector to Emitter Saturation Voltage | VCE(sat)(2) | -0.9 | V | IC=-1.5A, IB=-150mA | |||
| Collector to Emitter Saturation Voltage | VCE(sat)(3) | -1.7 | V | IC=-3.0A, IB=-600mA | |||
| Base to Emitter Saturation Voltage | VBE(sat)(1) | -1.5 | V | IC=-1.5A, IB=-150mA | |||
| Base to Emitter Saturation Voltage | VBE(sat)(2) | -2.0 | V | IC=-3.0A, IB=-600mA | |||
| Base to Emitter On Voltage | VBE(on) | -1.2 | V | VCE=-1.0V, IC=-500mA | |||
| Transition Frequency | fT | 50 | MHz | VCE=-10V, IC=-100mA | |||
| Reverse Transfer Capacitance | Cob | 50 | pF | VCB=-10V, f=0.1MHz | |||
Packaging & Handling
| Description | Temperature | Time | Notes |
|---|---|---|---|
| Temperature Profile for Dip Soldering (Pb-Free) | Preheating: 25~150 | 60~90 sec | |
| Peak Temp.: 2455 | 50.5 sec | ||
| Cooling Speed | 2~10/sec | ||
| Resistance to Soldering Heat Test Conditions | 2605 | 101 sec |
Packaging Specifications
Reel Package
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (Reel) | Dimension (Inner Box) | Dimension (Outer Box) |
|---|---|---|---|---|---|---|---|---|
| TO-252 | 2,500 | 2 | 5,000 | 6 | 30,000 | 1316 | 36036050 | 380335366 |
Tube Package
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (Tube) | Dimension (Inner Box) | Dimension (Outer Box) |
|---|---|---|---|---|---|---|---|---|
| TO-251/252 | 75 | 48 | 3,600 | 5 | 18,000 | 52620.55.25 | 55516450 | 575290180 |
2410121236_BLUE-ROCKET-BRMJE172D_C358472.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
