Industrial Power MOSFET Bestirpower BMB65N380E1 Featuring 650V Breakdown Voltage and RoHS Compliant Design
Key Attributes
Model Number:
BMB65N380E1
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
9.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@0.8mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
224pF@400V
Number:
1 N-channel
Input Capacitance(Ciss):
624pF@400V
Pd - Power Dissipation:
87W
Gate Charge(Qg):
16.5nC@10V
Mfr. Part #:
BMB65N380E1
Package:
TO-263-2L
Product Description
Product Overview
This Power MOSFET is designed for high-performance power applications, offering robust features such as PFC, hard, and soft switching topologies. It is suitable for both industrial and consumer power supplies. The device is free from Halogen and RoHS compliant, ensuring environmental responsibility. Key characteristics include a 650V drain-to-source breakdown voltage and a low on-resistance of 380m (typ.). Its advanced design supports efficient power conversion in demanding environments.
Product Attributes
- Brand: Bestirpower
- Certifications: Halogen Free, RoHS Compliant
- Topology Support: PFC, Hard & Soft Switching
- Application Areas: Industrial & Consumer Power Supplies
- Package: TO263-2
- Packing Method: Tape&Reel
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain to Source Voltage | VDSS | (TC = 25 unless otherwise noted) | 650 | V | ||
| Gate to Source Voltage | VGSS | (TC = 25 unless otherwise noted) | ±30 | V | ||
| Drain Current Continuous | ID | (TC = 25) | 9.6* | A | ||
| Drain Current Pulsed | IDM | (Note1) | 28.8* | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note2) | 40 | mJ | ||
| Avalanche Current | IAS | (Note2) | 2.5 | A | ||
| Repetitive Avalanche Energy | EAR | (Note1) | 0.87 | mJ | ||
| MOSFET dv/dt | dv/dt | 100 | V/ns | |||
| Peak Diode Recovery dv/dt | (Note3) | |||||
| Power Dissipation | PD | (TC = 25) | 28 | W | ||
| Derate Above 25 | 0.220 | 0.22 | W/ | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | TL | 260 | ||||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case, Max. | RJC | 4.5 | /W | |||
| Thermal Resistance, Junction to Ambient, Max. | RJA | 62.5 | /W | |||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| Drain to Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 1 mA | 650 | V | ||
| Drain to Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 1 mA, TJ = 150 | 700 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 650 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 520 V, VGS = 0 V, TJ = 125 | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS = ±30 V, VDS = 0 V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 0.8 mA | 2.5 | 4.5 | V | |
| Static Drain to Source On Resistance | RDS(on) | VGS = 10 V, ID = 4 A | 318 | 380 | m | |
| Input Capacitance | Ciss | VDS = 400 V, VGS = 0 V, f = 250 kHz | 624 | pF | ||
| Output Capacitance | Coss | VDS = 0 V to 400 V, VGS = 0 V | 17 | pF | ||
| Time Related Output Capacitance | Co(tr) | 224 | pF | |||
| Energy Related Output Capacitance | Co(er) | 28 | pF | |||
| Total Gate Charge at 10 V | Qg(tot) | VDS = 400 V, ID = 4 A, VGS = 10 V | 16.5 | nC | ||
| Gate to Source Charge | Qgs | 3.4 | nC | |||
| Gate to Drain Miller Charge | Qgd | 8.2 | nC | |||
| Gate Resistance | RG | f = 1 MHz | 6.9 | |||
| Turn-On Delay Time | td(on) | VDS = 400 V, ID = 4 A, VGS = 10 V, RG = 10 | 9 | ns | ||
| Turn-On Rise Time | tr | 9 | ns | |||
| Turn-Off Delay Time | td(off) | 39 | ns | |||
| Turn-Off Fall Time | tf | 10 | ns | |||
| Maximum Continuous Diode Forward Current | IS | 9.6 | A | |||
| Maximum Pulsed Diode Forward Current | ISM | 28.8 | A | |||
| Diode Forward Voltage | VSD | VGS = 0 V, ISD = 4 A | 1.2 | V | ||
| Reverse Recovery Time | trr | VDD = 400 V, ISD = 4 A, dIF/dt = 100 A/s | 220 | ns | ||
| Reverse Recovery Charge | Qrr | 1.78 | C | |||
| Part Number & Ordering Information | ||||||
| Part Number | ||||||
| Top Marking | ||||||
| Package | ||||||
| Packing Method | ||||||
| Quantity | 50 | units | ||||
| Model | PMF65N380E7 | |||||
| Top Marking | PMF65N380E7 | |||||
| Model | BMB65N380E1 | 650V 380m Power MOSFET | ||||
2412021740_Bestirpower-BMB65N380E1_C42401707.pdf
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