Power Factor Correction MOSFET Bestirpower BMD60N650UC1Z Featuring Low On Resistance and Gate Charge
Key Attributes
Model Number:
BMD60N650UC1Z
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
8A
RDS(on):
650mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.16pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
406pF@50V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
15nC
Mfr. Part #:
BMD60N650UC1Z
Package:
TO-252
Product Description
Product Overview
The Bestirpower BMx60N650UC1Z is an N-Channel Power MOSFET designed with advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device provides an advantage of Low EMI and low switching loss, making it suitable for applications such as Power Factor Correction (PFC), adapters, LCD TVs, LED lighting, and Uninterruptible Power Supplies (UPS). Key features include an ultra-fast body diode, extremely low losses due to a very low FOM (Rdson*Qg and Eoss), and very high commutation and ESD ruggedness.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Diode: Ultra-fast body diode
Technical Specifications
| Model | Package | Top Marking | Packing Method | BVDSS, Tc=25 | ID, Tc=25 | RDS(on),max. Tc=25 | Qg,typ |
|---|---|---|---|---|---|---|---|
| BMx60N650UC1Z | TO-220 | BMF60N650UC1Z | Tube | 600 V | 8 A | 650 m | 15 nC |
| BMx60N650UC1Z | TO-220F | BMB60N650UC1Z | Tube | 600 V | 8 A | 650 m | 15 nC |
| BMx60N650UC1Z | TO-263 | BMD60N650UC1Z | Tape & Reel | 600 V | 8 A | 650 m | 15 nC |
| BMx60N650UC1Z | TO-252 | BMP60N650UC1Z | Tape & Reel | 600 V | 8 A | 650 m | 15 nC |
Absolute Maximum Ratings (TC = 25 unless otherwise noted)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V DSS | Drain to Source Voltage | 600 | V |
| V GSS | Gate to Source Voltage | 25 | V |
| I D | Drain Current Continuous (TC= 25) | 8 | A |
| I D | Drain Current Continuous (TC= 100) | 5 | A |
| I DM | Drain Current Pulsed | 24 | A |
| PD | Power Dissipation For TO-220F | 62.5 | W |
| E AS | Single Pulsed Avalanche Energy | 81 | mJ |
| T STG | Storage Temperature Range | -55 to 150 | |
| T J | Maximum Operating Junction Temperature | 150 | |
| T L | Maximum Lead Temperature for Soldering, 1/8 from Case | 260 | |
| I S | Continuous diode forward current TC=25C | 8 | A |
| I S,pulse | Diode pulse current | 24 | A |
Thermal Characteristics (TO-220F FullPAK)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| RJC | Thermal Resistance, Junction to Case,max | 2 | /W |
| RJA | Thermal Resistance, Junction to Ambient,max | 62 | /W |
Thermal Characteristics (TO-220, TO-252, TO-263 Non FullPAK)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| RJC | Thermal Resistance, Junction to Case,max | 4.9 | /W |
| RJA | Thermal Resistance, Junction to Ambient,max | 49 | /W |
Electrical Characteristics (TJ = 25 unless otherwise noted)
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250A | 600 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V TJ=25C | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V TJ=150C | - | - | 10 | A |
| IGSS | Gate-Source Leakage Current | VGS = 20 V, VDS = 0 V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250A | 3.0 | - | - | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 3.5A,TJ=25C | - | 550 | 650 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, f=1MHz | - | 406 | - | pF |
| Coss | Output Capacitance | VGS=0V, VDS=50V, f=1MHz | - | 25 | - | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=50V, f=1MHz | - | 1.16 | - | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDD =480V, ID =4A | - | 15 | - | nC |
| Qgs | Gate to Source Charge | VGS = 0 to 10V, VDD =480V, ID =4A | - | 2.4 | - | nC |
| Qgd | Gate to Drain Miller Charge | VGS = 0 to 10V, VDD =480V, ID =4A | - | 9 | - | nC |
| Vplateau | Gate plateau voltage | VGS = 0 to 10V, VDD =480V, ID =4A | - | 6 | - | V |
| RG | Gate Resistance | VDD = 0V, VGS= 0V,f = 1.0MHz | - | 3.6 | - | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 26 | - | ns |
| tr | Turn-On Rise Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 28 | - | ns |
| td(off) | Turn-Off Delay Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 40 | - | ns |
| tf | Turn-Off Fall Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 16 | - | ns |
| Reverse Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | IF=4A, VGS = 0V TJ =25C | - | 0.91 | - | V |
| trr | Reverse Recovery Time | VR = 400V, IF =5A diF/dt = 100A/s | - | 80 | - | ns |
| Qrr | Reverse Recovery Charge | VR = 400V, IF =5A diF/dt = 100A/s | - | 0.39 | - | C |
| Irrm | Peak Reverse Recovery Current | VR = 400V, IF =5A diF/dt = 100A/s | - | 9.2 | - | A |
| Co(er) | Effective output capacitance, energy related | VDS= 0 to 400V | - | 4.0 | 5.0 | pF |
| Co(tr) | Effective output capacitance, time related | VDS= 0 to 400V | - | 16 | - | pF |
2504141435_Bestirpower-BMD60N650UC1Z_C47715868.pdf
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