industrial half bridge IGBT module Bestirpower BS450HF120B2SDX with low losses and high current rating
Key Attributes
Model Number:
BS450HF120B2SDX
Product Custom Attributes
Td(off):
410ns
Pd - Power Dissipation:
2.307kW
Td(on):
120ps
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
75nF@25V
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@8mA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
3800nC@15V
Switching Energy(Eoff):
41.5mJ
Turn-On Energy (Eon):
10.9mJ
Mfr. Part #:
BS450HF120B2SDX
Package:
Screw Terminals
Product Description
Product Overview
Bestirpower's BS450HF120B2SDX is a 1200V, 450A Half Bridge IGBT Module designed for high-frequency applications. Featuring ultrafast switching speeds, it is ideal for welding, inductive heating, and UPS systems. Key advantages include a positive temperature coefficient for VCE(sat), low switching losses, high current capability, and excellent short-circuit ruggedness, making it a robust solution for demanding industrial environments.
Product Attributes
- Brand: Bestirpower
- Model: BS450HF120B2SDX
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | ±20 | V | Continuous |
| Continuous Collector Current (IC) at TC=25 | 700 | A | Fig.1,2 |
| Continuous Collector Current (IC) at TC=100 | 450 | A | |
| Maximum Power Dissipation (PD) at TC=25 | 2307 | W | |
| Short Circuit Withstand Time (tsc) | 10 | µs | |
| Maximum IGBT Junction Temperature (TJ) | 175 | ||
| Maximum Operating Junction Temperature Range (TJOP) | -40 to +150 | ||
| Storage Temperature Range (Tstg) | -40 to +125 | ||
| Repetitive Peak Reverse Voltage (VRRM) (Preliminary Data) | 1200 | V | Diode |
| Diode Continuous Forward Current (IF) | 450 | A | |
| Diode Maximum Forward Current (IFM) | 900 | A | |
| IGBT Electrical Characteristics | |||
| Collector-Emitter Breakdown Voltage (BVCES) | 1200 | V | VGE= 0V,IC = 1mA |
| Collector-Emitter Leakage Current (ICES) | 1 | mA | VCE= 1200V ,VGE = 0V |
| Gate-Emitter Leakage Current (IGES) | ±400 | nA | VGE= 20V, VCE=0V |
| Gate Threshold Voltage (VGE(th)) | 5.0 / 5.8 / 6.6 | V | VGE=VCE, IC=8mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.60 / 2.00 | V | VGE=15V, IC=450A, TJ= 25C / 150C |
| Turn-on Delay time (td(on)) | 0.12 / 0.13 | ns | TJ= 25C / 150C |
| Turn-on Rise Time (tr) | 0.05 | µs | TJ= 25C / 150C |
| Turn-off Delay time (td(off)) | 0.41 / 0.46 | µs | TJ= 25C / 150C |
| Turn-off Fall Time (tf) | 0.14 / 0.23 | µs | TJ= 25C / 150C |
| Turn-on Switching Loss (Eon) | 10.9 / 19.1 | mJ | TJ= 25C / 150C |
| Turn-off Switching Loss (Eoff) | 41.5 / 51.8 | mJ | TJ= 25C / 125C |
| Total Gate Charge (Qg) | 3800 | nC | TJ= 25C |
| Input Capacitance (Cies) | 75 | nF | TJ= 25C |
| Reverse Transfer Capacitance (Cres) | 1.3 | nF | |
| Integrated Gate Resistor (RGint) | 1.0 | Ω | |
| Thermal Resistance, Junction-to-Case (IGBT) (RthJC) | 0.065 | /W | Per IGBT |
| Thermal Resistance, Case-to-Heatsink (RthCH) | 0.03 | /W | Per IGBT, λgrease = 1 W/(m·K) |
| Diode Electrical Characteristics | |||
| Diode Forward Voltage (VF) | 2.05 / 1.95 | V | IF = 450A, TJ= 25C / 150C |
| Diode peak Reverse Recovery Current (Irr) | 494 / 536 | A | TJ= 25C / 150C |
| Diode Reverse Recovery Charge (Qrr) | 43 / 73 | µC | TJ= 25C / 150C |
| Diode Reverse Recovery Energy (Err) | 23.3 / 33.2 | mJ | TJ= 25C / 150C |
| Thermal Resistance, Junction-to-Case (Diode) (RthJC) | 0.11 | /W | Per Diode |
| Thermal Resistance, Case-to-Heatsink (RthCH) | 0.06 | /W | Per Diode, λgrease = 1 W/(m·K) |
| Module Characteristics | |||
| Isolation Voltage (VISOL) | 4000 | V | (All Terminals Shorted),f = 50Hz, 1minute |
| Case-To-Sink Thermal Resistance (RθCS) | 0.1 | /W | (Conductive Grease Applied) |
| Power Terminals Screw | M6 | 2.5 - 5.0 N·m | |
| Mounting Screw | M6 | 3.0 - 6.0 N·m | |
| Weight | 310 | g | |
2506121605_Bestirpower-BS450HF120B2SDX_C49164829.pdf
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