High Current N channel Power MOSFET BL BLP05N08G P with 4.4 Milliohm On Resistance and Fast Switching
Key Attributes
Model Number:
BLP05N08G-P
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Pd - Power Dissipation:
173.6W
Input Capacitance(Ciss):
4.021nF@40V
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
BLP05N08G-P
Package:
TO-220
Product Description
Product Overview
The BLP05N08G is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy handling. It is ideally suited for demanding applications such as motor drivers and high-speed switching circuits.
Product Attributes
- Brand: Belling
- Certifications: RoHS product
Technical Specifications
| Model | Description | Key Characteristics | Applications | Ordering Codes |
|---|---|---|---|---|
| BLP05N08G | N-channel Enhanced Power MOSFET |
|
|
|
Absolute Maximum Ratings (TC=25C, unless otherwise specified)
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 85 | V |
| ID | Continuous Drain Current, Silicon Limited | 138 | A |
| ID | Continuous Drain Current, Package Limited | 120 | A |
| ID | Continuous Drain Current @TC=100C, Silicon Limited | 87.4 | A |
| IDM | Pulsed Drain Current (Note 1) | 480 | A |
| VGS | Gate-Source Voltage | 20 | V |
| EAS | Avalanche Energy (Note 2) | 156 | mJ |
| PD | Power Dissipation | 173.6 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | |
| TL | Maximum Temperature for Soldering | 260 |
Thermal Characteristics
| Symbol | Parameter | Max | Units |
|---|---|---|---|
| RJC | Thermal resistance, Junction-Case | 0.72 | /W |
| RJA | Thermal resistance, Junction-Ambient | 62.5 | /W |
Electrical Characteristics (TC=25C, unless otherwise specified)
OFF Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| VDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 85 | -- | -- | V |
| IDSS | Drain-Source Leakage Current | VDS=85V, VGS=0V | -- | -- | 1 | A |
| IDSS | Drain-Source Leakage Current @TC=125C | VDS=68V, VGS=0V | -- | -- | 100 | A |
| IGSS(F) | Gate-Source Forward Leakage | VGS=+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate-Source Reverse Leakage | VGS=-20V | -- | -- | -100 | nA |
ON Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=50A | -- | 4.4 | 5 | m |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
Dynamic Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Ciss | Input Capacitance | VDS=40V, VGS=0, f=1MHz | -- | 4021 | -- | pF |
| Coss | Output Capacitance | -- | 637 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Qg | Total Gate Charge | VDD=40V, ID=50A, VGS=10V | -- | 80 | -- | nC |
| Qgs | Gate-Source charge | -- | 23 | -- | nC | |
| Qgd | Gate-Drain charge | -- | 24 | -- | nC |
Switching Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| td(on) | Turn-On Delay Time | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load | -- | 22 | -- | ns |
| tr | Rise Time | -- | 42 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 48 | -- | ns | |
| tf | Fall Time | -- | 25 | -- | ns |
Source-Drain Diode Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| IS | Continuous Source Current | -- | -- | 120 | A | |
| ISM | Maximum Pulsed Current | -- | -- | 480 | A | |
| VSD | Diode Forward Voltage | VGS=0V, IS=50A | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | Is=20A, di/dt=100A/us | -- | 60 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 136 | -- | uC |
Package Description
TO-263 Package Dimensions
| Item | MIN | MAX |
|---|---|---|
| A | 9.80 | 10.40 |
| B | 8.90 | 9.50 |
| B1 | 0 | 0.10 |
| C | 4.40 | 4.80 |
| D | 1.16 | 1.37 |
| E | 0.70 | 0.95 |
| F | 0.30 | 0.60 |
| G | 1.07 | 1.47 |
| H | 1.30 | 1.80 |
| K | 0.95 | 1.37 |
| L1 | 14.50 | 16.50 |
| L2 | 1.60 | 2.30 |
| I | 0 | 0.2 |
| Q | 0 | 8 |
| R | 0.4 | 0.4 |
| N | 2.39 | 2.69 |
TO-220 Package Dimensions
| Item | MIN | MAX |
|---|---|---|
| A | 9.60 | 10.6 |
| B | 15.0 | 16.0 |
| B1 | 8.90 | 9.50 |
| C | 4.30 | 4.80 |
| C1 | 2.30 | 3.10 |
| D | 1.20 | 1.40 |
| E | 0.70 | 0.90 |
| F | 0.30 | 0.60 |
| G | 1.17 | 1.37 |
| H | 2.70 | 3.80 |
| L | 12.6 | 14.8 |
| N | 2.34 | 2.74 |
| Q | 2.40 | 3.00 |
| P | 3.50 | 3.90 |
2201121300_BL-BLP05N08G-P_C2924855.pdf
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