Lead Free P Channel Enhancement Mode Power MOSFET BL BLM2301 with Low Gate Charge and SOT 23 Package
Key Attributes
Model Number:
BLM2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3.3nC@2.5V
Mfr. Part #:
BLM2301
Package:
SOT-23
Product Description
Product Overview
The Belling BLM2301 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it highly suitable for applications such as load switching and Pulse Width Modulation (PWM). The device boasts high power and current handling capabilities and is a lead-free product.Product Attributes
- Brand: Belling
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Technology: Advanced Trench Technology
- Material: Lead Free Product
- Package: SOT-23
- Certifications: Pb Free
Technical Specifications
| Specification | Parameter | Value | Unit |
|---|---|---|---|
| General Features | VDS | -20 | V |
| ID | -3 | A | |
| RDS(ON) @ VGS=-2.5V | < 140 | m | |
| RDS(ON) @ VGS=-4.5V | < 110 | m | |
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | -20 | V |
| Gate-Source Voltage (VGS) | ±12 | V | |
| Drain Current-Continuous (ID) | -3 | A | |
| Drain Current -Pulsed (IDM) | -10 | A | |
| Maximum Power Dissipation (PD) | 1 | W | |
| Operating Junction and Storage Temperature Range (TJ, TSTG) | -55 To 150 | ||
| Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | -20 | V |
| Zero Gate Voltage Drain Current (IDSS) | -1 | µA | |
| Gate-Body Leakage Current (IGSS) | ±100 | nA | |
| On Characteristics | Gate Threshold Voltage (VGS(th)) | -0.4 To -1 | V |
| Drain-Source On-State Resistance (RDS(ON)) @ VGS=-4.5V, ID=-3A | 64 To 110 | m | |
| Drain-Source On-State Resistance (RDS(ON)) @ VGS=-2.5V, ID=-2A | 89 To 140 | m | |
| Forward Transconductance (gFS) | 9.5 | S | |
| Dynamic Characteristics | Input Capacitance (CLSS) | 405 | pF |
| Output Capacitance (COSS) | 75 | pF | |
| Reverse Transfer Capacitance (CRSS) | 55 | pF | |
| Switching Characteristics | Turn-on Delay Time (td(on)) | 11 | nS |
| Turn-on Rise Time (tr) | 35 | nS | |
| Turn-Off Delay Time (td(off)) | 30 | nS | |
| Turn-Off Fall Time (tf) | 10 | nS | |
| Gate Charge | Total Gate Charge (Qg) | 3.3 To 12 | nC |
| Gate-Source Charge (Qgs) | 0.7 | nC | |
| Gate-Drain Charge (Qgd) | 1.3 | nC | |
| Diode Characteristics | Diode Forward Voltage (VSD) | -1.2 | V |
| Diode Forward Current (IS) | -1.3 | A | |
| Package Marking | Device Marking | 2301 | - |
| Ordering Information | Device | BLM2301 | - |
| Package | SOT-23 | - | - |
| Reel Size | Ø180mm | - | - |
| Tape Width | 8 mm | - | - |
| Quantity | 3000 units | - | - |
| SOT-23 Package Dimensions | A | 0.900 To 1.150 | mm |
| A1 | 0.000 To 0.100 | mm | |
| A2 | 0.900 To 1.050 | mm | |
| b | 0.300 To 0.500 | mm | |
| c | 0.080 To 0.150 | mm | |
| D | 2.800 To 3.000 | mm | |
| E | 1.200 To 1.400 | mm | |
| E1 | 2.250 To 2.550 | mm | |
| e | 0.950 TYP | - | |
| e1 | 1.800 To 2.000 | mm | |
| L | 0.550 REF | - | |
| L1 | 0.300 To 0.500 | mm | |
| θ | 0° To 8° | - |
1810301830_BL-BLM2301_C81106.pdf
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