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quality Power MOSFET BL BLM07N06 D with high density cell design offering low RDS ON and high ESD protection factory
quality Power MOSFET BL BLM07N06 D with high density cell design offering low RDS ON and high ESD protection factory

Power MOSFET BL BLM07N06 D with high density cell design offering low RDS ON and high ESD protection

Key Attributes
Model Number: BLM07N06-D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
95A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
-
Output Capacitance(Coss):
345pF
Input Capacitance(Ciss):
3.7nF
Pd - Power Dissipation:
143W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
BLM07N06-D
Package:
TO-252-2
Product Description

Product Overview

The BLM07N06 is a Green Product N-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of 60V, ID of 95A, and RDS(ON) < 7m @ VGS=10V. The device utilizes a high-density cell design for lower Rdson, special process technology for high ESD capability, and is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS. It is 100% UIS TESTED and 100% DVDS TESTED.

Product Attributes

  • Brand: Belling
  • Product Code: BLM07N06
  • Product Type: Green Product N-Channel Power MOSFET
  • Technology: Advanced trench technology
  • ESD Capability: High
  • Package Options: TO-220, TO-252-2L

Technical Specifications

Parameter Symbol Condition Limit Unit
Key Characteristics
Drain-Source Voltage VDS 60 V
Drain Current-Continuous ID 95 A
RDS(ON) RDS(ON) VGS=10V < 7 m
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 95 A
Drain Current-Pulsed (Note 1) IDM 380 A
Maximum Power Dissipation (Tc=25) PD 143 W
Single pulse avalanche energy (Note 2) EAS 260 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case RJC 1.05 /W
Thermal Resistance,Junction-to-Ambient RJA 62.5 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - 1 µA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 2 2.8 4 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A (Note 3) - 6.0 7.0 m
Forward Transconductance gFS VDS=5V,ID=15 - 1 S
Dynamic Characteristics
Input Capacitance Clss VDS=30V,VGS=0V, f=1.0MHz - 3700 pF
Output Capacitance Coss - 345 pF
Reverse Transfer Capacitance Crss - 270 pF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=30V, ID=30A, VGS=10V,RGEN=3Ω - 19 nS
Turn-on Rise Time tr - 36 nS
Turn-Off Delay Time td(off) - 45 nS
Turn-Off Fall Time tf 24 - nS
Total Gate Charge Qg VDS=48V,ID=30A, VGS=10V - 80 nC
Gate-Source Charge Qgs - 25 nC
Gate-Drain Charge Qgd - 22 nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=1A - - 1.2 V

2411121100_BL-BLM07N06-D_C2826597.pdf
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