Silicon NPN Transistor BLUE ROCKET 2SD669A Low Frequency Power Amplification TO126F Plastic Package

Name: Silicon NPN Transistor BLUE ROCKET 2SD669A Low Frequency Power Amplification TO126F Plastic Package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SD669A
Availability: InStock

Key Attributes

Model Number: 2SD669A

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

10uA

Pd - Power Dissipation:

Transition Frequency(fT):

140MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

1.5A

Collector - Emitter Voltage VCEO:

160V

Operating Temperature:

Mfr. Part #:

2SD669A

Package:

TO-126F

Product Description

Product Overview

The 2SD669(A) is a silicon NPN transistor designed for low-frequency power amplification. It comes in a TO-126F plastic package and serves as a complementary pair with the 2SB649(A). This transistor is suitable for various amplification applications.

Product Attributes

Brand: FSB (implied by datasheet URL http://www.fsbrec.com)
Package Type: TO-126F Plastic Package
Transistor Type: NPN Silicon
Complementary Pair: 2SB649(A)

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Typ	Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO		V
		2SD669: 120 2SD669A: 160	V
Emitter to Base Voltage	VEBO	5.0	V
Collector Current - Continuous	IC	1.5	A
Collector Current (Pulse)	ICP	3.0	A
Collector Power Dissipation	PC	1.0	W	(Ta=25)
Collector Power Dissipation	PC	20	W	(Tc=25)
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO	180	V	IC=1.0mA, IE=0
Collector to Emitter Breakdown Voltage	VCEO		V	IC=10mA, RBE=
		2SD669: 120 2SD669A: 160	V
Emitter to Base Breakdown Voltage	VEBO	5.0	V	IE=1.0mA, IC=0
Collector Cut-Off Current	ICBO	10	A	VCB=160V, IE=0
DC Current Gain	hFE(1)			VCE=5.0V, IC=150mA	60		320
	hFE(2)			VCE=5.0V, IC=500mA	30
Base to Emitter Voltage	VBE		V	VCE=5.0V, IC=150mA		1.5
Collector to Emitter Saturation Voltage	VCE(sat)		V	IC=500mA, IB=50mA		1.0
Transition Frequency	fT	140	MHz	VCE=5.0V, IC=150mA
Collector output capacitance	Cob	14	pF	VCB=10V, IE=0, f=1.0MHz

Packaging Information

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Inner Box Dimensions (mm)	Outer Box Dimensions (mm)
BULK (TO-126/F)	500	6	3,000	5	15,000	237172102	560245195
TUBE (TO-126/F)	65	26	1,690	5	8,450	55516450	575290180

Marking Instructions

The marking consists of:

BR: Company Code
D669A: Product Type Code
B: hFE Classifications Symbol
****: Lot No. Code (changes with Lot No.)

Example: BR D669A B ****

Soldering Profile

Temperature Profile for Dip Soldering (Pb-Free):

Preheating: 25~150, Duration: 60~90 seconds
Peak Temperature: 2555, Duration: 50.5 seconds
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

Temperature: 2705
Time: 101 sec

2410121234_BLUE-ROCKET-2SD669A_C328595.pdf

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