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quality Automotive certified NPN transistor BLUE ROCKET BRMJD112Q with TO 252 package and high DC current gain factory
quality Automotive certified NPN transistor BLUE ROCKET BRMJD112Q with TO 252 package and high DC current gain factory

Automotive certified NPN transistor BLUE ROCKET BRMJD112Q with TO 252 package and high DC current gain

Key Attributes
Model Number: BRMJD112Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20uA
Pd - Power Dissipation:
20W
Transition Frequency(fT):
25MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
BRMJD112Q
Package:
TO-252
Product Description

Product Overview

The BRMJD112Q is a high DC current gain NPN silicon transistor designed for medium power switching applications. It features a TO-252 plastic package, a built-in damper diode between the emitter and collector, and is electrically similar to the BRTIP112Q. Qualified to AEC-Q101 Standards for High Reliability, this product is halogen-free and meets the stringent requirements of automotive applications.

Product Attributes

  • Brand: FS (implied by URL)
  • Product Type: NPN Silicon Transistor
  • Package Type: TO-252 Plastic Package
  • Certifications: AEC-Q101 Standard for High Reliability
  • Material/Feature: Halogen-Free Product
  • Internal Components: Built-in damper diode at E-C
  • Marking Code: BR (Company Code), Q (Automobile halogen-free product Code), MJD112 (Product Type), **** (Lot No. Code)

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current - Continuous IC 2.0 A
Collector Current Continuous(Pulse) IC(Pulse) 4.0 A
Base Current - Continuous IB 50 mA
Collector Power Dissipation PC 1.75 W
Collector Power Dissipation (TC=25) PC(TC=25) 20 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Emitter Breakdown Voltage* VCEO* IC=10mA IB=0 100 V
Collector Cut-Off Current ICEO VCE=50V IB=0 0.02 mA
Collector Cut-Off Current ICBO VCB=100V IE=0 0.02 mA
Emitter Cut-Off Current IEBO VEB=5.0V IC=0 2.0 mA
DC Current Gain hFE(1)* VCE=3.0V IC=2.0A 1000 12K
DC Current Gain hFE(2)* VCE=3.0V IC=0.5A 500
DC Current Gain hFE(3)* VCE=3.0V IC=4.0A 200
Collector-Emitter Saturation Voltage VCE(sat)1* IC=2.0A IB=8.0mA 2.0 V
Collector-Emitter Saturation Voltage VCE(sat)2* IC=4.0A IB=40mA 3.0 V
Base-Emitter Saturation Voltage* VBE(sat)* IC=4.0A IB=40mA 4.0 V
Base-Emitter-On Voltage* VBE(on)* VCE=3.0V IC=2.0A 2.8 V
Current Gain Bandwidth Product fT VCE=10V IC=0.75A 25 MHz
Output Capacitance Cob VCB=10V IE=0 f=0.1MHz 100 pF
Package Type Dimension Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box
TO-252 (Reel) 1316 2,500 2 5,000 6 30,000
TO-251/252 (Tube) 52620.55.25 75 48 3,600 5 18,000

2410121238_BLUE-ROCKET-BRMJD112Q_C22400492.pdf

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