86--136 6733 2386
quality Low Frequency Power Amplifier Transistor BLUE ROCKET 2SD669AD-C Silicon NPN Type with TO-252 Package factory
quality Low Frequency Power Amplifier Transistor BLUE ROCKET 2SD669AD-C Silicon NPN Type with TO-252 Package factory

Low Frequency Power Amplifier Transistor BLUE ROCKET 2SD669AD-C Silicon NPN Type with TO-252 Package

Key Attributes
Model Number: 2SD669AD-C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
10W
Transition Frequency(fT):
140MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2SD669AD-C
Package:
TO-252
Product Description

Product Overview

The 2SD669AD is a Silicon NPN transistor housed in a TO-252 plastic package. It serves as a complementary pair with the 2SB649AD and is designed for low-frequency power amplification applications. Key features include a continuous collector current of 1.5A and a collector-emitter breakdown voltage of 160V.

Product Attributes

  • Brand: FSB (implied by URL and marking code 'BR')
  • Product Type: Silicon NPN Transistor
  • Package Type: TO-252 Plastic Package
  • Complementary Pair: 2SB649AD
  • Application: Low frequency power amplifier
  • Marking Code: D669AD

Technical Specifications

Parameter Symbol Rating / Test Conditions Value Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO 180 V
Collector to Emitter Voltage VCEO 160 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current - Continuous IC 1.5 A
Collector Current Continuous(Pulse) ICP 3.0 A
Collector Power Dissipation PC 1.0 W
Collector Power Dissipation PC(Tc=25) 10 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage VCBO IC=1.0mA, IE=0 180 V
Collector to Emitter Breakdown Voltage VCEO IC=10mA, RBE= 160 V
Emitter to Base Breakdown Voltage VEBO IE=1.0mA, IC=0 5.0 V
Collector Cut-Off Current ICBO VCB=160V, IE=0 10 A
DC Current Gain hFE(1) VCE=5.0V, IC=150mA 60320
DC Current Gain hFE(2) VCE=5.0V, IC=500mA 30
Base to Emitter Voltage VBE VCE=5.0V, IC=150mA 1.5 V
Collector to Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 1.0 V
Transition Frequency fT VCE=5.0V, IC=150mA 140 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1.0MHz 14 pF

Packaging Specifications

Reel Package

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Package Dimensions (mm)
TO-252 2,500 2 5,000 5 25,000 1316

Tube Package

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Package Dimensions (mm)
TO-251/252 75 48 3,600 5 18,000 52620.55.25

Soldering Profile

Temperature Profile for IR Reflow Soldering (Pb-Free):

  • Preheating: 25~150, Time: 60~90 seconds
  • Peak Temp.: 2455, Duration: 50.5 seconds
  • Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2605
  • Time: 101 sec

Marking Instructions

Format: BR **** D669AD B

  • BR: Company Code
  • D669AD: Product Type
  • B: hFE Classifications Symbol
  • ****: Lot No. Code (changes with Lot No.)

2410121236_BLUE-ROCKET-2SD669AD-C_C358470.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package factory
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.