Low Collector Emitter Saturation Voltage Transistor BLUE ROCKET KTD1624-C for Relay and Lamp Drivers

Name: Low Collector Emitter Saturation Voltage Transistor BLUE ROCKET KTD1624-C for Relay and Lamp Drivers
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: KTD1624-C
Availability: InStock

Key Attributes

Model Number: KTD1624-C

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

1uA

Pd - Power Dissipation:

Transition Frequency(fT):

150MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

Collector - Emitter Voltage VCEO:

50V

Operating Temperature:

Mfr. Part #:

KTD1624-C

Package:

SOT-89

Product Description

Product Overview

The KTD1624 is a Silicon NPN transistor housed in a SOT-89 plastic package. Engineered with MBIT processes, it offers low collector-to-emitter saturation voltage, fast switching speeds, large current capacity, and a wide safe operating area. This transistor is complementary to the KTB1124 and is a halogen-free product. It is suitable for applications such as voltage regulators, relay drivers, lamp drivers, and general electrical equipment.

Product Attributes

Package Type: SOT-89 Plastic Package
Transistor Type: NPN Silicon Transistor
Certifications: Halogen-free Product
Complementary to: KTB1124

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	60	V
Collector to Emitter Voltage	VCEO	50	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current - Continuous	IC	3.0	A
Collector Current ContinuousPulse	ICP	6.0	A
Collector Power Dissipation	PC	500	mW
Collector Power Dissipation* (*Package mounted on ceramic substrate(250mm20.8t))	*PC	1.0	W
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A IE=0			60	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA IB=0			50	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=40V IE=0		1.0	A
Emitter Base Cut-Off Current	IEBO	VEB=4.0V IC=0		1.0	A
DC Current Gain (1)	hFE(1)	VCE=2.0V IC=100mA	100		400
DC Current Gain (2)	hFE(2)	VCE=2.0V IC=3.0A		35
Collector to Emitter Saturation Voltage	VCE(sat)	IC=2.0A IB=100mA		0.19	0.5	V
Base to Emitter Voltage	VBE	IC=2.0A IB=100mA		0.94	1.2	V
Transition Frequency	fT	VCE=10V IC=50mA		150		MHz
Collector Output Capacitance	Cob	VCB=10V IE=0 f=1MHz		25		pF
Turn-On Time	ton	101B1=-101B2=IC=1.0A		70		nS
Storage Time	tstg			650		nS
Fall Time	tf			35		nS

Marking Classifications	hFE Range	Marking
A	100200	YHA
B	140280	YHB
C	200400	YHC

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm 3)	Package Size
SOT-89	1,000	7	7,000	8	56,000	180120180	712

Soldering Condition	Temperature	Time
Resistance to Soldering Heat Test	2605	101 sec

IR Reflow Soldering (Pb-Free) - Preheating	Temperature	Time
	25~150	60~90sec

IR Reflow Soldering (Pb-Free) - Peak Temperature	Temperature	Duration
	2455	50.5sec

IR Reflow Soldering (Pb-Free) - Cooling Speed	Speed
	2~10/sec

2410121245_BLUE-ROCKET-KTD1624-C_C358518.pdf

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