General Purpose Audio Amplification Transistor BLUE ROCKET 2SA1015M PNP Silicon SOT23 Package Device
Key Attributes
Model Number:
2SA1015M
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA1015M
Package:
SOT-23
Product Description
Product Overview
The 2SA1015M is a Silicon PNP transistor housed in a SOT-23 plastic package. It offers high voltage and high current capabilities, excellent hFE linearity, and low noise characteristics, making it a complementary pair to the 2SC1815M. This transistor is ideally suited for general-purpose audio frequency amplification and driver stage amplifier applications.
Product Attributes
- Brand: FSB (implied by datasheet URL)
- Package Type: SOT-23 Plastic Package
- Transistor Type: PNP Silicon
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | -50 | V |
| Collector to Emitter Voltage | VCEO | -50 | V |
| Emitter to Base Voltage | VEBO | -5.0 | V |
| Collector Current | IC | -150 | mA |
| Base Current | IB | -50 | mA |
| Collector Power Dissipation | PC | 300 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector Cut-Off Current | ICBO | VCB=-50 V, IE=0 | -0.1 | A | ||
| Emitter Base Cut-Off Current | IEBO | VEB=-5.0V, IC=0 | -0.1 | A | ||
| DC Current Gain | hFE(1) | VCE=-6.0V, IC=-2.0mA | 70 | 400 | ||
| DC Current Gain | hFE(2) | VCE=-6.0V, IC=-150mA | 25 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-100mA, IB=-10mA | -0.1 | -0.3 | V | |
| Base to Emitter Saturation Voltage | VBE(sat) | IC=-100mA, IC=-10mA | -1.1 | V | ||
| Transition Frequency | fT | IC=-1.0mA, VCE=-10V | 80 | MHz | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1.0MHz | 4.0 | 7.0 | pF | |
| Base Intrinsic Resistance | rbb | VCB=-10V, IE=1.0mA, f=30MHz | 30 | |||
| Noise Figure | NF | VCE=-6.0V, IC=-0.1mA, RG=10k, f=1.0KHz | 1.0 | 10 | dB |
| hFE Classifications | Symbol | hFE Range | Marking |
|---|---|---|---|
| O | 70140 | HBAO | |
| Y | 120240 | HBAY | |
| GR | 200400 | HBAG |
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Reel Dimension | Box Dimension (mm) |
|---|---|---|---|---|---|---|---|
| SOT-23 | 3,000 | 10 | 30,000 | 8 | 180,000 | 78 | 180120180 (Inner Box), 390385205 (Outer Box) |
| Test Conditions | Temperature | Time |
|---|---|---|
| Resistance to Soldering Heat | 2605 | 101 sec |
| Stage | Temperature | Time |
|---|---|---|
| Preheating | 25~150 | 60~90 sec |
| Peak Temp. | 2455 | 50.5 sec |
| Cooling Speed | 2~10/sec |
2410121228_BLUE-ROCKET-2SA1015M_C328617.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
