General Purpose High Voltage Amplification BLUE ROCKET 2N5551-B Silicon NPN Transistor TO92 Package

Name: General Purpose High Voltage Amplification BLUE ROCKET 2N5551-B Silicon NPN Transistor TO92 Package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2N5551-B
Availability: InStock

Key Attributes

Model Number: 2N5551-B

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

625mW

Transition Frequency(fT):

110MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

160V

Operating Temperature:

Mfr. Part #:

2N5551-B

Package:

TO-92

Product Description

Product Overview

The 2N5551 is a Silicon NPN transistor housed in a TO-92 plastic package. It is designed for general-purpose high-voltage amplification and offers high breakdown voltage, making it a complementary pair with the 2N5401. This transistor is suitable for various amplification applications.

Product Attributes

Package Type: TO-92 Plastic Package
Transistor Type: NPN Silicon
Complementary Pair: 2N5401

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO	160	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current - Continuous	IC	600	mA
Base Current - Continuous	IB	300	mA
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Cut-Off Current	ICBO	VCB=180V, IE=0			0.1	A
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0			0.1	A
DC Current Gain	hFE(1)	VCE=5.0V, IC=10mA	50		400
	hFE(2)	VCE=5.0V, IC=50mA	20		160
	hFE(3)	VCE=5.0V, IC=1.0mA	40		190
Collector to Emitter Saturation Voltage	VCE(sat)(1)	IC=10mA, IB=1.0mA		0.06	0.15	V
Collector to Emitter Saturation Voltage	VCE(sat)(2)	IC=50mA, IB=5.0mA		0.09	0.3	V
Base to Emitter Saturation Voltage	VBE(sat)(1)	IC=10mA, IB=1.0mA		0.7	1.0	V
Base to Emitter Saturation Voltage	VBE(sat)(2)	IC=50mA, IB=5.0mA		0.8	1.0	V
Base to Emitter Voltage	VBE	VCE=5.0V, IC=10mA	0.68		0.75	V
Current Gain Bandwidth Product	fT	VCE=10V, IC=10mA	50		110	MHz
Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz		2.2	5.0	pF
Turn On Time	ton	IC=100mA, IB1=-IB2=10mA			0.3	s
Turn Off Time	toff	IC=100mA, IB1=-IB2=10mA			0.4	s
Storage Time	tstg	IC=100mA, IB1=-IB2=10mA			0.2	s

Marking Instructions

The marking on the product consists of the following components:

BR: Company Code
N5551: Product Type Code
A: hFE Classification Symbol
****: Lot No. Code (changes with Lot No.)

Example Marking: N5551 **** BR A

Resistance to Soldering Heat Test Conditions

Temperature: 2705
Time: 101 sec.

Packaging Specifications

BULK Package

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm)
TO-92	1,000	10	10,000	5	50,000	560245195
TO-92	1,000	10	10,000	10	100,000	560245375

AMMO Package

Package Type	Units/tape	Tape/Inner Box	Rows/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm)
TO-92	3,000	1	120	10	30,000	Small Box: 480346235, Large Box: 547407268

2410121234_BLUE-ROCKET-2N5551-B_C305399.pdf

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