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quality Compact SOT23 NPN transistor BLUE ROCKET MMBT5551 ideal for high voltage amplification and switching factory
quality Compact SOT23 NPN transistor BLUE ROCKET MMBT5551 ideal for high voltage amplification and switching factory

Compact SOT23 NPN transistor BLUE ROCKET MMBT5551 ideal for high voltage amplification and switching

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
110MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

Product Overview

The MMBT5551 is a Silicon NPN transistor in a SOT-23 plastic package, designed for general-purpose high-voltage amplification. It features high breakdown voltage and serves as a complementary pair with the MMBT5401. This transistor is suitable for various amplification tasks requiring high voltage capabilities.

Product Attributes

  • Brand: FsbRec (inferred from URL)
  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO 180 V
Collector to Emitter Voltage VCEO 160 V
Emitter to Base Voltage VEBO 6.0 V
Collector Current IC 600 mA
Base Current IB 300 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Electrical Characteristics (Ta=25)
Collector Cut-Off Current ICBO VCB=180V, IE=0 0.1 A
Emitter Cut-off Current IEBO VEB=6.0V, IC=0 0.1 A
DC Current Gain hFE VCE=5.0V, IC=10mA 50 200 400
VCE=5.0V, IC=50mA 160
VCE=5.0V, IC=1.0mA 40 190
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1.0mA 0.06 0.15 V
IC=50mA, IB=5.0mA 0.09 0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1.0mA 0.7 1.0 V
IC=50mA, IB=5.0mA 0.8 1.0 V
Base-Emitter Voltage VBE VCE=5.0V, IC=10mA 0.68 0.75 V
Transition Frequency fT VCE=10V, IC=10mA 50 110 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 2.2 5.0 pF
Turn-on Time ton IC=100mA, IB1=-IB2=10mA 0.3 s
Turn-off Time toff 0.4 s
Storage Time tstg 0.2 s

Packaging & Marking

  • Marking Codes: HG1A, HG1B, HG1C correspond to hFE ranges (50-150, 100-300, 200-400 respectively).
  • Marking Instructions: H (Company Code), G1 (Product Type Code), A (hFE Classifications Symbol Code).
  • Packaging: Reel package (78) for SOT-23, with 3,000 units per reel.
  • Reflow Soldering Profile (Pb-Free): Preheating 25-150 (60-90 sec), Peak Temp. 2455 (50.5 sec), Cooling Speed 2-10/sec.
  • Resistance to Soldering Heat: Temp. 2605, Time 101 sec.

2410121227_BLUE-ROCKET-MMBT5551_C5137050.pdf

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