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quality Double silicon NPN transistor with high voltage amplification BLUE ROCKET MMDT5551 in SOT363 package factory
quality Double silicon NPN transistor with high voltage amplification BLUE ROCKET MMDT5551 in SOT363 package factory

Double silicon NPN transistor with high voltage amplification BLUE ROCKET MMDT5551 in SOT363 package

Key Attributes
Model Number: MMDT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
110MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMDT5551
Package:
SOT-363
Product Description

Product Overview

The MMDT5551 is a double silicon NPN transistor housed in a SOT-363 plastic package. It features high breakdown voltage and serves as a complementary pair with the MMDT5401. This halogen-free product is designed for general-purpose high voltage amplification applications.

Product Attributes

  • Brand: fsbrec
  • Package Type: SOT-363
  • Product Type: Double silicon NPN transistor
  • Complementary Pair: MMDT5401
  • Halogen Free: Yes
  • Application: General purpose high voltage amplifier

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 180 V
Collector to Emitter Voltage VCEO 160 V
Emitter to Base Voltage VEBO 6.0 V
Collector Current IC 600 mA
Base Current IB 300 mA
Collector Power Dissipation PC 500 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut-Off Current ICBO VCB=180V, IE=0 0.1 A
Emitter Cut-off Current IEBO VEB=6.0V, IC=0 0.1 A
DC Current Gain hFE(1) VCE=5.0V, IC=10mA 100 300
hFE(2) VCE=5.0V, IC=50mA 20 160
hFE(3) VCE=5.0V, IC=1.0mA 40 190
Collector-Emitter Saturation Voltage VCE(sat)(1) IC=10mA, IB=1.0mA 0.06 0.15 V
VCE(sat)(2) IC=50mA, IB=5.0mA 0.09 0.3 V
Base-Emitter Saturation Voltage VBE(sat)(1) IC=10mA, IB=1.0mA 0.7 1.0 V
VBE(sat)(2) IC=50mA, IB=5.0mA 0.8 1.0 V
Base-Emitter Voltage VBE VCE=5.0V, IC=10mA 0.68 0.75 V
Transition Frequency fT VCE=10V, IC=10mA 50 110 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 2.2 5.0 pF
Turn-on Time ton IC=100mA, IB1=-IB2=10mA 0.3 s
Turn-off Time toff 0.4 s
Storage Time tstg 0.2 s
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box
SOT-363 3,000 10 30,000 6 180,000

2409271403_BLUE-ROCKET-MMDT5551_C22356947.pdf

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