Silicon PNP Transistor BLUE ROCKET 2SB1260-R with High Breakdown Voltage and Low VCEsat in SOT89 Package

Name: Silicon PNP Transistor BLUE ROCKET 2SB1260-R with High Breakdown Voltage and Low VCEsat in SOT89 Package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SB1260-R
Availability: InStock

Key Attributes

Model Number: 2SB1260-R

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

1uA

Pd - Power Dissipation:

500mW

Transition Frequency(fT):

100MHz

Type:

PNP

Number:

1 PNP

Current - Collector(Ic):

Collector - Emitter Voltage VCEO:

80V

Mfr. Part #:

2SB1260-R

Package:

SOT-89

Product Description

Product Overview

The 2SB1260 is a Silicon PNP transistor designed for general power amplifier applications. It features high breakdown voltage, good hFE linearity, and low VCE(sat), making it a complementary part to the 2SD1898. This transistor is housed in a SOT-89 plastic package.

Product Attributes

Brand: FSB (implied by URL http://www.fsbrec.com)
Package Type: SOT-89
Transistor Type: PNP Silicon
Complementary Part: 2SD1898

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	-80	V
Collector to Emitter Voltage	VCEO	-80	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current-Continuous	IC	-1.0	A
Collector Current-Continuous(Pulse)	ICP	-2.0	A	*Single pulse Pw=100ms
Collector Power Dissipation	PC	0.5	W	**mounted on 40400.7mm ceramic board
Collector Power Dissipation	PC	2.0	W	*Single pulse Pw=100ms
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO	-80	V	IC=-50A, IE=0
Collector to Emitter Breakdown Voltage	VCEO	-80	V	IC=-1.0mA, IB=0
Emitter to Base Breakdown Voltage	VEBO	-5.0	V	IE=-50A, IC=0
Collector Cut-Off Current	ICBO	-1.0	A	VCB=-60V, IE=0
Emitter Base Cut-Off Current	IEBO	-1.0	A	VEB=-4.0V, IC=0
DC Current Gain	hFE			VCE=-3.0V, IC=-0.1A	82	390
Collector to Emitter Saturation Voltage	VCE(sat)	-0.4	V	IC=-500mA, IB=-50mA
Transition Frequency	fT	100	MHz	VCE=-5.0V, IC=-50 mA, f=30MHz
Collector Output Capacitance	Cob	25	pF	VCE=-10V, IE=0, f=1.0MHz

Packaging Specifications

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Reel Dimension	Inner Box Dimension	Outer Box Dimension
SOT-89	1,000	7	7,000	8	56,000	712	180120180	385257392

Soldering Profile

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

Temp.: 2605
Time: 101 sec.

Marking Information

H: Company Code
BH: Product Type Code
P: hFE Classifications Code
**: Lot No. Code (changes with Lot No.)

Package Dimensions

(Image of package dimensions would be here if available in source)

Equivalent Circuit

(Image of equivalent circuit would be here if available in source)

Electrical Characteristic Curves

(Images of electrical characteristic curves would be here if available in source)

2410121238_BLUE-ROCKET-2SB1260-R_C19190002.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.