Silicon PNP Transistor BLUE ROCKET MMBT4403 SOT23 Package General Purpose Amplification Switching

Name: Silicon PNP Transistor BLUE ROCKET MMBT4403 SOT23 Package General Purpose Amplification Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT4403
Availability: InStock

Key Attributes

Model Number: MMBT4403

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

Pd - Power Dissipation:

350mW

Transition Frequency(fT):

200MHz

Type:

PNP

Number:

1 PNP

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

40V

Mfr. Part #:

MMBT4403

Package:

SOT-23

Product Description

Product Overview

The MMBT4403 is a Silicon PNP transistor housed in a SOT-23 plastic package. It is designed for general-purpose amplification and switching applications, capable of handling collector currents up to 500 mA. This transistor offers robust performance with key electrical characteristics and is suitable for various electronic circuits.

Product Attributes

Package Type: SOT-23
Transistor Type: PNP Silicon

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-40	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current	IC	-600	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Emitter Breakdown Voltage	VCEO	IC=-0.1mA, IB=0	-40			V
Collector to Base Breakdown Voltage	VCBO	IC=-1.0mA, IE=0	-40			V
Emitter to Base Breakdown Voltage	VEBO	IE=-0.1mA, IC=0	-5.0			V
Collector Cut-Off Current	ICBO	VCB=-40V, IE=0			-50	nA
Emitter Cut-Off Current	IEBO	VEB=-5.0V, IC=0			-50	nA
DC Current Gain	hFE	VCE=-2.0V, IC=-150mA	100		300
		VCE=-1.0V, IC=-0.1mA	30
		VCE=-1.0V, IC=-1.0mA	60
		VCE=-1.0V, IC=-10mA	100
		VCE=-2.0V, IC=-500mA	20
Collector-Emitter Saturation voltage	VCE(sat)	IC=-150mA, IB=-15mA		-0.4		V
Collector-Emitter Saturation voltage	VCE(sat)	IC=-500mA, IB=-50mA		-0.75		V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-150mA, IB=-15mA	-0.75	-0.95		V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA		-1.3		V
Transition Frequency	fT	VCE=-10V, IC=-20mA, f=100MHz		200		MHz
Delay Time	td	VCC=-30V, IC=-150mA, IB1=-15mA		15		ns
Rise Time	tr			20		ns
Storage Time	ts	VCC=-30V, IC=-150mA, IB1=IB2=-15mA		225		ns
Fall Time	tf			30		ns

Package Dimensions

(Diagram not provided in text, refer to datasheet for visual representation)

Marking Instructions

Marking Code: 2TH

2T: Product Type Code
H: Company Code

Temperature Profile for IR Reflow Soldering (Pb-Free)

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temp.: 2605
Time: 101 sec.

Packaging Specification

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (Reel)	Dimension (Inner Box)	Dimension (Outer Box)
SOT-23	3,000	10	30,000	6	180,000	78	180120180	390385205

2410121228_BLUE-ROCKET-MMBT4403_C305441.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.