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quality Amplification Solutions Featuring BLUE ROCKET 2SB649A-C Silicon PNP Transistor TO126 Plastic Package factory
quality Amplification Solutions Featuring BLUE ROCKET 2SB649A-C Silicon PNP Transistor TO126 Plastic Package factory

Amplification Solutions Featuring BLUE ROCKET 2SB649A-C Silicon PNP Transistor TO126 Plastic Package

Key Attributes
Model Number: 2SB649A-C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
20W
Transition Frequency(fT):
140MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2SB649A-C
Package:
TO-126
Product Description

Product Overview

The 2SB649(A) is a Silicon PNP transistor designed for low-frequency power amplification. It is a complementary pair to the 2SD669(A) and comes in a TO-126 plastic package. This transistor is suitable for various amplification tasks in electronic circuits.

Product Attributes

  • Brand: Fsb (implied by datasheet URL)
  • Package Type: TO-126 Plastic Package
  • Transistor Type: PNP Silicon Transistor
  • Complementary Pair: 2SD669(A)
  • Marking Code: BR B649 B (for hFE Class B)

Technical Specifications

Parameter Symbol Rating / Test Conditions Value / Unit
Collector to Emitter Voltage VCEO (2SB649) -120 V
VCEO (2SB649A) -160 V
Collector to Base Voltage VCBO -180 V
Emitter to Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -1.5 A
Peak Collector Current ICP -3.0 A
Collector Power Dissipation (Ambient) PC (Ta=25) 1.0 W
Collector Power Dissipation (Case) PC (Tc=25) 20 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Collector to Base Breakdown Voltage VCBO IC=-1.0mA, IE=0 -180 V
Collector to Emitter Breakdown Voltage VCEO IC=-10mA, RBE= (2SB649) -120 V
Collector to Emitter Breakdown Voltage VCEO IC=-10mA, RBE= (2SB649A) -160 V
Emitter to Base Breakdown Voltage VEBO IE=-1.0mA, IC=0 -5.0 V
Collector Cut-Off Current ICBO VCB=-160V, IE=0 -10 A
DC Current Gain hFE VCE=-5.0V, IC=-150mA 60320
VCE=-5.0V, IC=-500mA 30 (Typ)
Collector to Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA -1.0 V
Base to Emitter Saturation Voltage VBE(sat) VCE=-5.0V, IC=-150mA -1.5 V
Transition Frequency fT VCE=-5.0V, IC=-150mA 140 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1.0MHz 27 pF
hFE Classifications Symbol hFE Range
B 60120
C 100200
D 160320
Pin Configuration PIN 1 Emitter
PIN 2 Collector
PIN 3 Base

2410121236_BLUE-ROCKET-2SB649A-C_C305400.pdf

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