Field Effect Transistor P Channel BLUE ROCKET BRCS150P02ZJ Suitable for Power Management Applications
Key Attributes
Model Number:
BRCS150P02ZJ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
2.55nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
12.7nC@4.5V
Mfr. Part #:
BRCS150P02ZJ
Package:
DFN-6L(2x2)
Product Description
Product Overview
The BRCS150P02ZJ is a P-Channel Enhancement Mode Field Effect Transistor designed for power management applications. It is housed in a compact DFN 2x2B-6L plastic package and is suitable for use in notebook computers, portable equipment, and battery-powered systems. This product is halogen-free.
Product Attributes
- Brand: FS (implied by http://www.fsbrec.com)
- Product Type: P-Channel Enhancement Mode Field Effect Transistor
- Package Type: DFN 2x2B-6L
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Rating Unit | Value |
|---|---|---|---|
| Drain-Source Voltage | VDSS | V | -20 |
| Gate-Source Voltage | VGSS | V | 12 |
| Continuous Drain Current (Ta=25C) | ID | A | -11 |
| Pulsed Drain Current | IDM | A | -44 |
| Avalanche Current | IAS | A | 13 |
| Avalanche energy (L=0.5mH) | EAS | mJ | 59 |
| Power Dissipation (Single Operation, Ta=25) | PD | W | 3.0 |
| Maximum Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 | |
| Thermal Resistance-Junction to Ambient (t10s) | RJA | /W | 40 |
| Thermal Resistance-Junction to Ambient (Steady State) | RJA | /W | 75 |
| Drain-Source Breakdown Voltage (ID=-250A, VGS=0V) | BVDSS | V | -20 (Typ. -23) |
| Zero Gate Voltage Drain Current (VDS=-20V, VGS=0V) | IDSS | A | -1.0 (Max) |
| Gate-Body leakage current (VDS=0V, VGS=12V) | IGSS | nA | 100 (Max) |
| Gate Threshold Voltage (VDS=VGS, ID=-250A) | VGS(th) | V | -0.4 to -1.0 (Typ. -0.7) |
| Static Drain-Source On-Resistance (VGS=-4.5V, ID=-10A) | RDS(ON) | m | 15 (Typ. 17) |
| Static Drain-Source On-Resistance (VGS=-2.5V, ID=-5A) | RDS(ON) | m | 19 (Typ. 25) |
| Static Drain-Source On-Resistance (VGS=-1.8V, ID=-1A) | RDS(ON) | m | 27 (Typ. 38) |
| Diode Forward Voltage (IS=-1A, VGS=0V) | VSD | V | -1.2 (Typ.) |
| Total Gate Charge (VGS=-4.5V, VDS=-6V, ID=-8A) | Qg | nC | 12.7 (Typ.) |
| Gate-Source Charge (VGS=-4.5V, VDS=-6V, ID=-8A) | Qgs | nC | 1.7 (Typ.) |
| Gate-Drain Charge (VGS=-4.5V, VDS=-6V, ID=-8A) | Qgd | nC | 3.4 (Typ.) |
| Gate resistance (VGS=0V, VDS=0V, f=1MHz) | Rg | 13.5 (Typ.) | |
| Input Capacitance (VGS=0V, VDS=-20V, f=1MHz) | Ciss | pF | 2550 (Typ.) |
| Output Capacitance (VGS=0V, VDS=-20V, f=1MHz) | Coss | pF | 205 (Typ.) |
| Reverse Transfer Capacitance (VGS=0V, VDS=-20V, f=1MHz) | Crss | pF | 190 (Typ.) |
| Turn-on Delay Time (VGS=-4.5V, VDS=-6V, RL=0.75, RGEN=3) | td(ON) | ns | 11 (Typ.) |
| Turn-on Rise Time (VGS=-4.5V, VDS=-6V, RL=0.75, RGEN=3) | tr | ns | 25 (Typ.) |
| Turn-off Delay Time (VGS=-4.5V, VDS=-6V, RL=0.75, RGEN=3) | td(OFF) | ns | 70 (Typ.) |
| Turn-off Fall Time (VGS=-4.5V, VDS=-6V, RL=0.75, RGEN=3) | tf | ns | 41.5 (Typ.) |
Packaging Information
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Reel Dimensions (78) | Inner Box Dimensions (mm) | Outer Box Dimensions (mm) |
|---|---|---|---|---|---|---|---|---|
| DFN 2x2B-6L | 4,000 | 10 | 40,000 | 4 | 160,000 | 78 | 210205205 | 445230435 |
Notices
Resistance to Soldering Heat Test Conditions
- Temperature: 2605
- Time: 101 sec.
Temperature Profile for IR Reflow Soldering (Pb-Free)
- Preheating: 150~180, Time: 60~90 sec.
- Peak Temp.: 2455, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
2410121231_BLUE-ROCKET-BRCS150P02ZJ_C22448985.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
