Compact SOT323 Package BLUE ROCKET MMBT3904W Silicon NPN Transistor for Amplification and Switching

Name: Compact SOT323 Package BLUE ROCKET MMBT3904W Silicon NPN Transistor for Amplification and Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT3904W
Availability: InStock

Key Attributes

Model Number: MMBT3904W

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

Pd - Power Dissipation:

350mW

Transition Frequency(fT):

200MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

200mA

Collector - Emitter Voltage VCEO:

40V

Mfr. Part #:

MMBT3904W

Package:

SOT-323

Product Description

Product Overview

The MMBT3904W is a silicon NPN transistor designed for general-purpose amplification and switching applications. It features low current and low voltage characteristics, making it suitable for a wide range of electronic circuits. This product is halogen-free and comes in a compact SOT-323 plastic package, offering a reliable solution for various electronic designs.

Product Attributes

Brand: FSB (implied by URL and marking)
Product Type: NPN Semiconductor Transistor
Package Type: SOT-323 Plastic Package
Product Features: Low current, Low voltage, HF Product, Halogen-free
Marking Code: H1A

Technical Specifications

Parameter	Symbol	Rating Unit
Collector to Base Voltage	VCBO	60 V
Collector to Emitter Voltage	VCEO	40 V
Emitter to Base Voltage	VEBO	6.0 V
Collector Current - Continuous	IC	200 mA
Collector Power Dissipation	PC	200 mW
Collector Power Dissipation* (on 7x5x0.6mm ceramic board)	*PC	350 mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A, IE=0			60	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA, IB=0			40	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=30V, IE=0			0.05	A
Emitter to Base Current	IEBO	VEB=3.0V, IC=0			0.05	A
DC Current Gain	hFE(1)	VCE=1.0V, IC=10mA	100		300
DC Current Gain	hFE(2)	VCE=1.0V, IC=100mA		30
DC Current Gain	hFE(3)	VCE=1.0V, IC=50mA		60
DC Current Gain	hFE(4)	VCE=1.0V, IC=1mA		70
DC Current Gain	hFE(5)	VCE=1.0V, IC=0.1mA		40
Collector to Emitter Saturation Voltage	VCE(sat) (1)	IC=10mA, IB=1.0mA		0.2		V
Collector to Emitter Saturation Voltage	VCE(sat) (2)	IC=50mA, IB=5.0mA		0.06	0.3	V
Base to Emitter Saturation Voltage	VBE(sat) (1)	IC=10mA, IB=1.0mA		0.65	0.85	V
Base to Emitter Saturation Voltage	VBE(sat) (2)	IC=50mA, IB=5.0mA			0.95	V
Transition Frequency	fT	IC=10mA, VCE=20V, f=100MHz		200		MHz
Collector output capacitance	Cob	VCB=5.0V, f=1.0MHz			4.0	pF
Storage Time	tstg	VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA			600	ns
Fall Time	tf	VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA			150	ns
Delay Time	td	VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA			100	ns
Rise Time	tr	VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA			100	ns
Input Capacitance	Cib	VEB=0.5V, f=1.0MHz			8.0	pF

Package Dimensions

Refer to the provided package dimension diagrams for SOT-323.

Packaging Specifications

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimensions (mm)
SOT-323	3,000	10	30,000	6	180,000	78 (Reel), 180120180 (Inner Box), 390385205 (Outer Box)

Notices

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 150180, Time: 6090 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 210/sec.

Resistance to Soldering Heat Test Conditions:

Temperature: 2605
Time: 101 sec.

2409271403_BLUE-ROCKET-MMBT3904W_C22435015.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.