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quality Medium power amplification switching transistor BLUE ROCKET MMBTA06 Silicon NPN type in SOT-23 package factory
quality Medium power amplification switching transistor BLUE ROCKET MMBTA06 Silicon NPN type in SOT-23 package factory

Medium power amplification switching transistor BLUE ROCKET MMBTA06 Silicon NPN type in SOT-23 package

Key Attributes
Model Number: MMBTA06
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-
Mfr. Part #:
MMBTA06
Package:
SOT-23
Product Description

Product Overview

The MMBTA06 is a Silicon NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBTA56. This transistor is housed in a SOT-23 plastic package.

Product Attributes

  • Complementary to: MMBTA56
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO 80 V
Collector to Emitter Voltage VCEO 80 V
Emitter to Base Voltage VEBO 4.0 V
Collector Current - Continuous IC 500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage VCBO 80 V IC=100A, IE=0 80
Collector to Emitter Breakdown Voltage VCEO 80 V IC=1.0mA, IB=0 80
Emitter to Base Breakdown Voltage VEBO 4.0 V IE=100A, IC=0 4.0
Collector Cut-Off Current ICBO 0.1 A VCB=80 V, IE=0 0.1
Collector Cut-Off Current ICES 0.1 A VCE=80V, IE=0 0.1
DC Current Gain hFE(1) VCE=1.0V, IC=100mA 100 300
DC Current Gain hFE(2) VCE=1.0V, IC=10mA 100 300
Collector to Emitter Saturation Voltage VCE(sat) 0.25 V IC=100mA, IB=10mA 0.25
Base to Emitter Saturation Voltage VBE(sat) 1.2 V IC=100mA, IB=10mA 1.2
Transition Frequency fT 100 MHz IC=10mA, VCE=2V, f=100MHz 100
Marking Description Features Applications Equivalent Circuit Pinning hFE Range
HK1G NPN Silicon Transistor in SOT-23 Ideal for medium power amplification and switching Medium power amplification and switching PIN 1: Base, PIN 2: Emitter, PIN 3: Collector 100300
Marking Instructions Note
H: Company Code
K1G: Product Type Code		 HK1G
Temperature Profile for IR Reflow Soldering (Pb-Free) Note
1. Preheating: 25~150, Time: 60~90 sec.
2. Peak Temp.: 2455, Duration: 50.5 sec.
3. Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions
Temp: 2605 Time: 101 sec.
Packaging SPEC. Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (unit: mm)
REEL Package SOT-23 3,000 10 30,000 6 180,000 78, 180120180, 390385205

2410121227_BLUE-ROCKET-MMBTA06_C358507.pdf

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