switching n channel mosfet BLUE ROCKET BR50N06 in to 220 plastic package for battery operated products
Key Attributes
Model Number:
BR50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V,25A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
600pF
Input Capacitance(Ciss):
1.365nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
BR50N06
Package:
TO-220
Product Description
Product Overview
The BR50N06 is an N-channel MOSFET in a TO-220 plastic package, designed for low voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds. This makes it suitable for use in automotive circuits, DC/DC converters, and for high-efficiency power management in portable and battery-operated products.
Product Attributes
- Brand: FS (implied by fsbrec.com)
- Package Type: TO-220 Plastic Package
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating / Test Conditions | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||
| Drain-Source Voltage | VDSS | - | 60 | V |
| Drain Current (Tc=25) | ID(Tc=25) | - | 50 | A |
| Drain Current (Tc=100) | ID(Tc=100) | - | 35.4 | A |
| Drain Current - Pulsed | IDM | - | 200 | A |
| Gate-Source Voltage | VGS | - | 20 | V |
| Single Pulsed Avalanche Energy | EAS | - | 490 | mJ |
| Avalanche Current | EAR | - | 12 | mJ |
| Power Dissipation (Tc=25) | PD(Tc=25) | - | 120 | W |
| Operating Temperature Range | Tj | - | 150 | |
| Storage Temperature Range | Tstg | - | -55150 | |
| Electrical Characteristics (Ta=25) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, TC=150 | 10 | A |
| Gate-Body Leakage Current, Forward | IGSS | VGS=20V, VDS=0V | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 - 4 | V |
| Total Gate Charge | Qg | VDS=48V, ID=50A, VGS=10V | 32 - 42 | nC |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=25A | 0.018 - 0.022 | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=50A | 1.5 | V |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 1050 - 1365 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 460 - 600 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 70 - 90 | pF |
| Turn-On Delay Time | td(on) | VDD=30V, ID=25A, RG=25 | 20 - 50 | ns |
| Turn-On Rise Time | tr | VDD=30V, ID=25A, RG=25 | 100 - 210 | ns |
| Turn-Off Delay Time | td(off) | VDD=30V, ID=25A, RG=25 | 80 - 170 | ns |
| Turn-Off Fall Time | tf | VDD=30V, ID=25A, RG=25 | 85 - 180 | ns |
| Pin Configuration | ||||
| Pin 1 | G | - | - | - |
| Pin 2 | D | - | - | - |
| Pin 3 | S | - | - | - |
| Marking Instructions | ||||
| Company Code | BR | - | - | - |
| Product Type Code | 50N06 | - | - | - |
| Lot No. Code | **** | Code change with Lot No. | - | - |
| Packaging Specifications | ||||
| Package Type | BULK | Units/Bag | 200 | - |
| Package Type | BULK | Bags/Inner Box | 10 | - |
| Package Type | BULK | Units/Inner Box | 2,000 | - |
| Package Type | BULK | Inner Boxes/Outer Box | 5 | - |
| Package Type | BULK | Units/Outer Box | 10,000 | - |
| Package Type | TUBE | Units/Tube | 50 | - |
| Package Type | TUBE | Tubes/Inner Box | 20 | - |
| Package Type | TUBE | Units/Inner Box | 1,000 | - |
| Package Type | TUBE | Inner Boxes/Outer Box | 5 | - |
| Package Type | TUBE | Units/Outer Box | 5,000 | - |
2410121238_BLUE-ROCKET-BR50N06_C328291.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
