252 Package N Channel MOSFET BLUE ROCKET BRCS050N03DP for Battery Operated and Portable Applications

Key Attributes
Model Number: BRCS050N03DP
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
163pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2.03nF@25V
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
BRCS050N03DP
Package:
TO-252
Product Description

Product Overview

The BRCS050N03DP is an N-channel MOSFET in a TO-252 plastic package, designed for low voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds, making it suitable for high efficiency power conversion in portable and battery-operated products. Its applications include automotive circuits, DC/DC converters, and power management in portable devices.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Product Type: N-Channel MOSFET
  • Package: TO-252 Plastic Package
  • Halogen-Free: Yes (implied by "")

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 30 V
Drain Current (Tc=25) ID(Tc=25) 100 A
Drain Current - Pulsed IDM 215 A
Gate-Source Voltage VGS ±20 V
Avalanche Current IAS 23.5 A
Single Pulsed Avalanche Energy (L=0.5mH) EAS 220.9 mJ
Power Dissipation (Tc=25) PD(Tc=25) 85 W
Junction and Storage Temperature Range TJ, TSTG -55 150
Thermal Resistance-Junction to Ambient (t≤10s) RθJA 20 /W
Thermal Resistance-Junction to Ambient (Steady-State) RθJA 50 /W
Thermal Resistance-Junction to Case (Steady-State) RθJC 1.47 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 30 V
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1.0 μA
Gate-Body Leakage Current (Forward) IGSS VGS=±20V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.0 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 4.3 5
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 6.7 8
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A 0.72 1.4 V
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 3.1 Ω
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 2030 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz 168 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz 163 pF
Total Gate Charge (10V) Qg(10V) VGS=10V, VDS=15V, ID=20A 40 nC
Total Gate Charge (4.5V) Qg(4.5V) VGS=4.5V, VDS=15V, ID=10A 22 nC
Gate Source Charge Qgs VGS=4.5V, VDS=15V, ID=10A 11 nC
Gate Drain Charge Qgd VGS=4.5V, VDS=15V, ID=10A 5 nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time td(on) VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 11 ns
Turn-On Rise Time tr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 14 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 38 ns
Turn-Off Fall Time tf VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 10 ns
Marking Description
BR **** 050N03 BR: Company Code
050N03: Product Type Code
****: Lot No. Code
Package Dimensions Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Reel) Dimension (Inner Box) Dimension (Outer Box)
TO-252 2,500 2 5,000 6 30,000 13”×16 360×360×50 380×335×366
Package Dimensions Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Tube) Dimension (Inner Box) Dimension (Outer Box)
TO-251/252 75 48 3,600 5 18,000 526×20.5×5.25 555×164×50 575×290×180
Description Conditions
Temperature Profile for IR Reflow Soldering (Pb-Free) Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 245±5, Duration: 5±0.5 sec.
Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions Temp.: 260±5, Time: 10±1 sec.

2410121234_BLUE-ROCKET-BRCS050N03DP_C7429872.pdf

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