Power Management Transistor BLUE ROCKET BRCS150P04SC P Channel Enhancement Mode with Low On Resistance

Key Attributes
Model Number: BRCS150P04SC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
177pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
3.3nF
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
BRCS150P04SC
Package:
SOP-8
Product Description

Product Overview

The BRCS150P04SC is a P-Channel Enhancement Mode Field Effect Transistor housed in a SOP-8 plastic package. Designed for power management applications, this HF (Halogen-Free) product is suitable for notebook computers, portable equipment, and battery-powered systems. It offers a Drain-Source Voltage (VDS) of -40V and a continuous Drain Current (ID) of -10A at VGS = 20V, with a low Static Drain-Source On-Resistance (RDS(ON)) of less than 15m at VGS = -10V.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Product Type: P-Channel Enhancement Mode Field Effect Transistor
  • Package Type: SOP-8 Plastic Package
  • Certifications: HF Product (Halogen-Free)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Ta=25C) -10 A
Continuous Drain Current ID (Ta=70C) -8 A
Power Dissipation for Single Operation PD (Ta=25) 1.7 W
Power Dissipation for Single Operation PD (Ta=70) 1.1 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance-Junction to Ambient RJAt10s 40 /W
Thermal Resistance-Junction to Ambient RJA 75 /W
Maximum Junction-to-Lead RJL 24 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS ID=-250A VGS=0V -40 V
Zero Gate Voltage Drain Current IDSS VDS=-40V VGS=0V -1.0 A
Zero Gate Voltage Drain Current IDSS VDS=-40V VGS=0V TJ=55C -5.0 A
Gate-Body leakage current IGSS VDS=0V VGS=20V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250A -1.2 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V ID=-10A 13.1 15 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V ID=-7A 18 21 m
Forward Transconductance gFS VDS=-5V ID=-10A 9.5 S
Diode Forward Voltage VSD IS=-1A VGS=0V -0.8 -1.0 V
Total Gate Charge Qg(10V) VGS=-10V VDS=-20V ID=-10A 42 55 nC
Total Gate Charge Qg(4.5V) 18.6 nC
Gate-Source Charge Qgs 7 nC
Gate-Drain Charge Qgd 8.6 nC
Gate Resistance Rg VGS=0V VDS=0V f=1MHz 8.5
Input Capacitance Ciss VGS=0V VDS=-25V f=1MHz 3300 pF
Output Capacitance Coss 135 pF
Reverse Transfer Capacitance Crss 177 pF
Turn-on Delay Time td(ON) VGS=-10V VDS=-20V RL=2 RGEN=3 9.4 ns
Turn-on Rise Time tr 20 ns
Turn-off Delay Time td(OFF) 55 ns
Turn-off Fall Time tf 30 ns
Packaging SPEC.
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box
SOP/ESOP-8 4,000 2 8,000 6
Temperature Profile for IR Reflow Soldering(Pb-Free)
Step Temperature Time Notes
Preheating 150~180 60~90 sec
Peak Temp. 2455 50.5 sec
Cooling Speed 2~10/sec
Resistance to Soldering Heat Test Conditions
Temperature Time
2605 101 sec

2410121924_BLUE-ROCKET-BRCS150P04SC_C22448998.pdf

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