N Channel Enhancement Mode Field Effect Transistor BLUE ROCKET BRCS4484SC with SOP 8 Plastic Package

Key Attributes
Model Number: BRCS4484SC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
135pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.5nF@15V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
27.2nC@10V
Mfr. Part #:
BRCS4484SC
Package:
SOP-8
Product Description

Product Overview

The BRCS4484SC is an N-Channel Enhancement Mode Field Effect Transistor designed for a wide range of power conversion applications. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. This product is halogen-free and comes in a SOP-8 plastic package.

Product Attributes

  • Brand: FS (implied by URL)
  • Technology: Advanced trench technology
  • Environmental: Halogen-free
  • Package Type: SOP-8 Plastic Package

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGS ±20 V
Drain Current –Continuous (TA=25) ID 13.5 A
Drain Current –Continuous (TA=70) ID 10.8 A
Pulsed Drain Current IDM 120 A
Avalanche Current IAR G 23 A
Repetitive avalanche energy (L=0.3mH) EAR G 79 mJ
Power Dissipation for Single Operation (TA=25) PD A 3.1 W
Power Dissipation for Single Operation (TA=70) PD A 1.7 W
Thermal Resistance, Junction-to-Ambient (t≤10S) RθJA A 40 °C/W
Thermal Resistance, Junction-to-Ambient (Steady State) RθJA A 75 °C/W
Thermal Resistance, Junction-to Lead (Steady State) RθJL A 24 °C/W
Operating and Junction Temperature Range Tj Tstg -55 150 °C
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 40 V
Zero Gate Voltage Drain Current IDSS VDS=40V, VGS=0V 1.0 μA
Zero Gate Voltage Drain Current IDSS VDS=40V, VGS=0V, TJ=55°C 5.0 μA
Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.0 1.4 2.0 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=10A 8.2 10
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=10A, TJ=125°C 12.5
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=8.0A 12 15
Diode Forward Voltage VSD IS=1A, VGS=0V 0.72 1.0 V
Forward Transconductance gFS VDS=5V, ID=5A 10 S
Electrical Characteristics (Ta=25)
Input Capacitance Ciss VDS=15V, VGS=0V, f=1.0MHz 1500 1950 pF
Output Capacitance Coss VDS=15V, VGS=0V, f=1.0MHz 215 pF
Reverse Transfer Capacitance Crss VDS=15V, VGS=0V, f=1.0MHz 135 pF
Total Gate Charge (10V) Qg VDS=20V, ID=10A, VGS=10V 27.2 37 nC
Total Gate Charge (4.5V) Qg VDS=20V, ID=8.0A, VGS=4.5V 13.6 18 nC
Gate-Source Charge Qgs VDS=20V, ID=10A, VGS=10V 4.5 nC
Gate-Drain Charge Qgd VDS=20V, ID=10A, VGS=10V 6.4 nC
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 2.0 5.0 Ω
Turn-On Delay Time td(on) VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω 6.4 ns
Turn-On Rise Time tr VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω 17.2 ns
Turn-Off Delay Time td(off) VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω 29.6 ns
Turn-Off Fall Time tf VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω 16.8 ns
Continuous Drain-Source Diode Forward Current IS 2.5 A
Body Diode Reverse Recovery Time trr IF=10A, dI/dt=100A/μs 30 40 ns
Body Diode Reverse Recovery Charge Qrr IF=10A, dI/dt=100A/μs 19 nC
Pin Configuration
PIN 1, 2, 3 S Source
PIN 4 G Gate
PIN 5, 6, 7, 8 D Drain
Marking Instructions
Company Code BR
Product Type 4484
Lot No. Code **** (code change with Lot No.)
Packaging Specifications
Package Type SOP/ESOP-8 Units/Reel 4,000 Reels/Inner Box 2
Units/Inner Box 8,000 Inner Boxes/Outer Box 6 Units/Outer Box 48,000
Reel Dimension 13”×12 Inner Box Dimension 360×360×50 Outer Box Dimension 380×335×366

2410121250_BLUE-ROCKET-BRCS4484SC_C914060.pdf

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