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quality N Channel MOSFET PDFN 5x6 Package Featuring Low RDS ON and Low Gate Charge BLUE ROCKET BRCS080N04ZC factory
quality N Channel MOSFET PDFN 5x6 Package Featuring Low RDS ON and Low Gate Charge BLUE ROCKET BRCS080N04ZC factory

N Channel MOSFET PDFN 5x6 Package Featuring Low RDS ON and Low Gate Charge BLUE ROCKET BRCS080N04ZC

Key Attributes
Model Number: BRCS080N04ZC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
36.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
BRCS080N04ZC
Package:
PDFN-8(5x6)
Product Description

Product Overview

The BRCS080N04ZC is an N-Channel MOSFET in a PDFN 5x6 plastic package. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This product is also Halogen-Free (HF). It is designed for high-frequency switching, synchronous rectification, and DC-motor driver applications.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com and marking 'BR')
  • Package Type: PDFN 5x6
  • Channel Type: N-Channel
  • Product Features: Low RDS(ON), Low Gate Charge, Low Thermal Resistance, Halogen-Free (HF)
  • Marking Code: BR 080N04 **** (BR: Company Code, 080N04: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 40 V
Drain Current ID(Tc=25) 52 A
Drain Current - Pulsed IDM 110 A
Gate-Source Voltage VGS 20 V
Single Pulsed Avalanche Energy EAS 67.6 mJ
Avalanche Current IAS 13 A
Power Dissipation PD(Tc=25) 36.5 W
Operating and Storage Temperature Range TJ,Tstg -55 150
Thermal resistance, junction - ambient RJA t 10s 20 / W
Thermal resistance, junction - ambient RJA Steady-State 55 / W
Thermal resistance, junction - case RJC Steady-State 3.4 / W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 40 47 V
Zero Gate Voltage Drain Current IDSS VDS=40V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 0.1 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 6.4 8 m
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 10 13 m
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 850 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz 115 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz 30 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 2.4
Electrical Characteristics (Ta=25)
Total Gate Charge Qg(10V) VGS=10V, VDS=20V, ID=20A 21 nC
Total Gate Charge Qg(4.5V) VGS=4.5V, VDS=20V, ID=10A 8.8 nC
Gate Source Charge Qgs VGS=10V, VDS=20V, ID=20A 5.5 nC
Gate Drain Charge Qgd VGS=10V, VDS=20V, ID=20A 3.1 nC
Turn-On Delay Time td(on) VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 7.5 ns
Turn-On Rise Time tr VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 2 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 24 ns
Turn-Off Fall Time tf VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 3 ns
Package Dimensions
Package Type Dimension mm
PDFN56 (See Package Dimensions Diagram)
Packaging Specifications
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Dimension
PDFN56 5000 2 10000 6 60000 1312

2410121227_BLUE-ROCKET-BRCS080N04ZC_C22448996.pdf

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