power control solution BLUE ROCKET BRCS700P10DP P channel MOSFET in TO 252 package for DC DC converters

Key Attributes
Model Number: BRCS700P10DP
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
67mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
670pF
Number:
1 P-Channel
Output Capacitance(Coss):
840pF
Input Capacitance(Ciss):
2.82nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
5.9nC@10V
Mfr. Part #:
BRCS700P10DP
Package:
TO-252
Product Description

Product Overview

The BRCS700P10DP is a P-channel MOSFET in a TO-252 plastic package, designed for power management in industrial DC/DC converters. It features low on-resistance, fast switching speeds, and is a halogen-free product. This MOSFET is suitable for applications requiring efficient power control.

Product Attributes

  • Brand: FS (implied by URL)
  • Package Type: TO-252 Plastic Package
  • Product Type: P-Channel MOSFET
  • Features: Low On-Resistance, Fast Switching, Halogen-Free Product
  • Application: Power Management of Industrial DC/DC Converters
  • Marking Code: BR 700P10 **** (BR: Company Code, 700P10: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter Symbol Rating Unit
Drain-Source Voltage VDS -100 V
Drain Current Continuous (Tc=25) ID(Tc=25) -14 A
Drain Current Pulsed IDM -30 A
Gate-Source Voltage VGS 20 V
Power Dissipation (Tc=25) PD(Tc=25) 30 W
Single Pulse Avalanche Energy (L=0.5mH) EAS 176.4 mJ
Avalanche Current (L=0.5mH) IAS -21 A
Junction and Storage Temperature Range Tj, Tstg -55 to 150
Thermal resistance, junction - ambient (t 10s) RJA 16.7 / W
Thermal resistance, junction - ambient (Steady-State) RJA 41.7 / W
Thermal resistance, junction - case (Steady-State) RJC 4.2 / W
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS ID=-250A, VGS=0V -100 -113 V
Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 uA
Gate-Body leakage current IGSS VDS=0V, VGS= 20V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1 -2.0 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-10A 67 70 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-6A 70 85 m
Diode Forward Voltage VSD IS=-1A, VGS=0V -1.2 V
Input Capacitance Ciss VDS=-15V, VGS=0V, f=1.0MHz 2820 pF
Output Capacitance Coss VGS=0V, VDS=0V, f=1MHz 840 pF
Reverse Transfer Capacitance Crss VGS=0V, VDS=0V, f=1MHz 670 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 2.7
Total Gate Charge Qg(10V) VGS=-10V, VDS=-50V, ID=-5A 5.9 nC
Total Gate Charge Qg(4.5V) VGS=-10V, VDS=-50V, ID=-5A 2.7 nC
Gate Source Charge Qgs VGS=-10V, VDS=-50V, ID=-5A 1.2 nC
Gate Drain Charge Qgd VGS=-10V, VDS=-50V, ID=-5A 1.2 nC
Turn-On Delay Time td(on) VGS=-10V, VDS=-50V, RL=10, RGEN=3 6 ns
Turn-On Rise Time tr VGS=-10V, VDS=-50V, RL=10, RGEN=3 2.4 ns
Turn-Off Delay Time td(off) VGS=-10V, VDS=-50V, RL=10, RGEN=3 19 ns
Turn-Off Fall Time tf VGS=-10V, VDS=-50V, RL=10, RGEN=3 2.6 ns

Packaging and Handling

Soldering Profile (Pb-Free)

  • Preheating: 150~180, Time: 60~90 seconds
  • Peak Temperature: 2455, Duration: 50.5 seconds
  • Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions

  • Temperature: 2605
  • Time: 101 sec

Packaging Specifications

Reel Package
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimensions (mm)
TO-252 2,500 2 5,000 6 30,000 13 16 (Reel), 360 360 50 (Inner Box), 380 335 366 (Outer Box)
Tube Package
Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimensions (mm)
TO-251/252 75 48 3,600 5 18,000 526 20.5 5.25 (Tube), 555 164 50 (Inner Box), 575 290 180 (Outer Box)

2410121228_BLUE-ROCKET-BRCS700P10DP_C22449016.pdf

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