Power Management P Channel Enhancement Mode Transistor BLUE ROCKET BR4407 with Low RDS ON and High Current Rating
Product Overview
The BR4407 is a P-Channel Enhancement Mode Field Effect Transistor designed for power management applications. It is housed in a SOP-8 plastic package and offers key features such as a low Drain-Source Voltage (VDS) of -30V, a high Continuous Drain Current (ID) of -12A at 25C, and low On-State Drain-Source Resistance (RDS(ON)) as low as 10m (VGS = -20V, ID = -10A) and 11m (VGS = -10V, ID = -10A). This transistor is ideal for use in notebook computers, portable equipment, and battery-powered systems.
Product Attributes
- Brand: FS (implied by fsbrec.com)
- Package Type: SOP-8 Plastic Package
- Transistor Type: P-Channel Enhancement Mode Field Effect Transistor
- Marking Code: BR **** 4407 (BR: Company Code, 4407: Product Type, ****: Lot No. Code)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID (Ta=25°C) | -12 | A | |||
| Continuous Drain Current | ID (Ta=70°C) | -10 | A | |||
| Pulsed Drain Current | IDM | B | -60 | A | ||
| Power Dissipation (Single Operation) | PD (Ta=25° °C) | A | 3 | W | ||
| Power Dissipation (Single Operation) | PD (Ta=100° °C) | A | 2.1 | W | ||
| Maximum Junction Temperature | Tj | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Resistance-Junction to Ambient | RθJA (t≤10s) | A | 40 | °C/W | ||
| Thermal Resistance-Junction to Ambient | RθJA | A | 75 | °C/W | ||
| Maximum Junction-to-Lead | RθJL | C | 30 | °C/W | ||
| Drain-Source Breakdown Voltage | BVDSS | ID=-250µA, VGS=0V | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1.0 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V, TJ=55°C | -5.0 | µA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -1.0 | -1.5 | -3.0 | V |
| On-State Drain Current | ID(ON) | VGS=-10V | 60 | A | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A | 11 | 14 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A, TJ=125°C | 15 | 19 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-20V, ID=-10A | 10 | 13 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 24 | mΩ | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-10A | 26 | S | ||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -0.72 | -1.0 | V | |
| Maximum Body-Diode Continuous Current | IS | -4.2 | A | |||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-12A | 37.2 | 45 | nC | |
| Gate-Source Charge | Qgs | 7 | ||||
| Gate-Drain Charge | Qgd | 10.4 | ||||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 2.0 | 3.0 | Ω | |
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 2076 | 2500 | pF | |
| Output Capacitance | Coss | 503 | ||||
| Reverse Transfer Capacitance | Crss | 302 | ||||
| Turn-on Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω | 12.4 | ns | ||
| Turn-on Rise Time | tr | 8.2 | ||||
| Turn-off Delay Time | td(OFF) | 25.6 | ns | |||
| Turn-off Fall Time | tf | 12 | ||||
| Body Diode Reverse Recovery Time | trr | IF=-12A, dI/dt=100A/µs | 33 | 40 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-12A, dI/dt=100A/µs | 23 | nC |
Notes:
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating.
Packaging Specifications
Reel Package:
- Package Type: SOP/ESOP-8
- Units per Reel: 4,000
- Reels per Inner Box: 2
- Units per Inner Box: 8,000
- Inner Boxes per Outer Box: 6
- Units per Outer Box: 48,000
- Reel Dimensions: 13″×12″
- Inner Box Dimensions: 360×360×50 (mm)
- Outer Box Dimensions: 380×335×366 (mm)
Soldering Profile & Conditions
Temperature Profile for IR Reflow Soldering (Pb-Free):
- Preheating: 150~180°C, Time: 60~90 sec.
- Peak Temp.: 245±5°C, Duration: 5±0.5 sec.
- Cooling Speed: 2~10°C/sec.
Resistance to Soldering Heat Test Conditions:
- Temperature: 260±5°C
- Time: 10±1 sec.
2410121250_BLUE-ROCKET-BR4407_C328572.pdf
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