Super high density cell N channel MOSFET BLUE ROCKET BRCS80N03DP in TO 252 package for power devices
Key Attributes
Model Number:
BRCS80N03DP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
90W
Gate Charge(Qg):
-
Mfr. Part #:
BRCS80N03DP
Package:
TO-252
Product Description
Product Overview
The BRCS80N03DP is an N-channel MOSFET in a TO-252 plastic package, featuring a super high-density cell design for low RDS(on). This rugged and reliable surface mount device is halogen-free and well-suited for high efficiency switching DC/DC converters and switch mode power supplies. It offers a low on-resistance and is designed for demanding power applications.
Product Attributes
- Brand: FS (implied by URL http://www.fsbrec.com)
- Package Type: TO-252 Plastic Package
- Halogen-Free: Yes
- Cell Design: Super high dense
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Drain-Source Voltage | VDSS | 30 | V | ||||
| Drain Current | ID(Tc=25) | 80 | A | ||||
| Drain Current - Pulsed | IDM | 300 | A | ||||
| Gate-Source Voltage | VGSS | ±20 | V | ||||
| Single Pulsed Avalanche Energy | EAS | 211 | mJ | ||||
| Avalanche Current | IAS | 23 | A | ||||
| Power Dissipation | PD(Tc=25) | 90 | W | ||||
| Operating and Storage Temperature Range | TJ,Tstg | -55 to 150 | |||||
| Junction-to-Ambient Thermal Resistance | RθJA | 18 | /W | t≤10s | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 45 | /W | Steady-State | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.38 | /W | Steady-State | |||
| Electrical Characteristics (Ta=25) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | |||
| Gate-Body Leakage Current | IGSS | ±0.1 | μA | VGS=±20V, VDS=0V | |||
| Gate Threshold Voltage | VGS(th) | V | VDS=VGS, ID=250μA | 1.0 | 1.7 | 2.5 | |
| Static Drain-Source On-Resistance | RDS(on) | mΩ | VGS=10V, ID=70A | 4.8 | 6.5 | ||
| Static Drain-Source On-Resistance | RDS(on) | mΩ | VGS=4.5V, ID=35A | 7.0 | 9 | ||
| Drain-Source Diode Forward Voltage | VSD | V | VGS=0V, IS=10A | 1.2 | |||
| Input Capacitance | Ciss | 2090 | pF | VDS=25V, VGS=0V, f=1.0MHz | |||
| Output Capacitance | Coss | 790 | pF | VGS=0V, VDS=0V, f=1MHz | |||
| Reverse Transfer Capacitance | Crss | 634 | pF | VGS=0V, VDS=0V, f=1MHz | |||
| Gate Resistance | Rg | 1.9 | Ω | VGS=0V, VDS=0V, f=1MHz | |||
| Total Gate Charge | Qg(10V) | nC | VDD=10V, VDS=15V, ID=20A | 30 | 42 | ||
| Total Gate Charge | Qg(4.5V) | nC | VDD=10V, VDS=15V, ID=20A | 14 | 20 | ||
| Gate Source Charge | Qgs | nC | VDD=10V, VDS=15V, ID=20A | 5.1 | |||
| Gate Drain Charge | Qgd | nC | VDD=10V, VDS=15V, ID=20A | 6.3 | |||
| Turn-On Delay Time | td(on) | 8 | ns | VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | |||
| Turn-On Rise Time | tr | 4 | ns | VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | |||
| Turn-Off Delay Time | td(off) | 29 | ns | VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | |||
| Turn-Off Fall Time | tf | 5.5 | ns | VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | |||
| Body Diode Reverse Recovery Time | trr | 16.5 | ns | IF=20A, dl/dt=500A/μs | |||
| Body Diode Reverse Recovery Charge | Qrr | 34.2 | nC | IF=20A, dl/dt=500A/μs | |||
Packaging
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (Reel) | Dimension (Inner Box) | Dimension (Outer Box) |
|---|---|---|---|---|---|---|---|---|
| TO-252 (Reel) | 2,500 | 2 | 5,000 | 5 | 25,000 | 13"×16" | 360×360×50 | 385×257×392 |
| TO-251/252 (Tube) | 75 | 48 | 3,600 | 5 | 18,000 | 526×20.5×5.25 | 555×164×50 | 575×290×180 |
Soldering Profile
Temperature Profile for IR Reflow Soldering (Pb-Free):
- Preheating: 150~180, Time: 60~90 seconds.
- Peak Temperature: 245±5, Duration: 5±0.5 seconds.
- Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions:
- Temperature: 260±5
- Time: 10±1 seconds.
Marking Instructions
Marking: BR **** 80N03
- BR: Company Code
- 80N03: Product Type Code
- ****: Lot No. Code (changes with Lot No.)
Pinning
- PIN 1: G
- PIN 2: D
- PIN 3: S
- PIN 4: D
Equivalent Circuit
(Diagram not provided in text, refer to datasheet for visual representation)
2410121234_BLUE-ROCKET-BRCS80N03DP_C914064.pdf
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