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quality transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving factory
quality transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving factory

transistor array BORN ULN2803QN ideal for high power buffer applications and inductive load driving

Key Attributes
Model Number: ULN2803QN
Product Custom Attributes
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
ULN2803QN
Package:
QFN4x4-20L
Product Description

Product Overview

The BORN SEMICONDUCTOR ULN2803QN series is a high-voltage, high-current Darlington transistor array designed for driving a wide range of loads. Each array contains seven open-collector common-emitter pairs, with each pair rated at 500mA and capable of 50V outputs. Integrated suppression diodes are included for inductive load driving, and the input/output pin arrangement simplifies board layout. These devices are suitable for applications such as solenoids, relays, DC motors, LED displays, filament lamps, thermal print-heads, and high-power buffers.

Product Attributes

  • Brand: BORN SEMICONDUCTOR
  • Series: ULN2803QN
  • Package: QFN4X4-20L

Technical Specifications

Parameter Symbol Min Typ Max Unit Notes
Collector Current (single output) ICP - - 500 mA/ch (See typical characteristics)
High-Voltage Outputs VCC -0.5 - 50 V Collector to emitter voltage
VCOM voltage VCOM - - 50 V Voltage of Pin COM
Input voltage VI -0.5 - 30 V
Output clamp current IOK - - 500 mA
Total emitter-terminal current ITE -2.5 - - A
Operating virtual junction temperature TJ - - 150 C
Storage temperature range TSTG -65 - 150 C
Power consumption PD - - 1.3 W
Operating Ambient Temperature TA -40 - 105 C
On-state input voltage VI(on) - - 2.4 - 3.0 V VCE = 2 V, IC = 200-300 mA
Collector-emitter saturation voltage VCE(sat) - 0.9 - 1.2 1.1 - 1.6 V II = 250-500 A, IC = 100-350 mA
Collector cutoff current ICEX - - 50 - 100 A VCE = 50 V, II = 0, TA = 25C/105C
Clamp forward voltage VF - - 2 V IF = 350 mA
Off-state input current II(off) 50 65 - A VCE= 50 V, IC = 500 A
Input current II - 0.93 - 1.35 - mA VI = 3.85 V
Clamp reverse current IR - - 50 - 100 A VR = 50 V, TA = 25C/70C
Input capacitance Ci - 15 25 pF VI = 0, f = 1 MHz
Propagation delay time, low-to-high tPLH - 0.25 1 s
Propagation delay time, high-to-low tPHL - 0.25 1 s
High-level output voltage after switching VOH - VS20 - mV VS = 50 V, IO = 300 mA
QFN4X4-20L Package Dimensions (mm)
Symbol Min Typ Max
A 0.400 0.450 0.500
A1 0.500 0.550 0.600
A2 0.700 0.750 0.800
D 3.900 4.000 4.100
E 3.900 4.000 4.100
D1 2.625 2.650 2.675
E1 2.625 2.650 2.675
k 0.150 - -
b 0.200 0.250 0.300
e - 0.500 -
L 0.300 0.400 0.500

2410122023_BORN-ULN2803QN_C7461219.pdf

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