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quality P Channel Enhancement Mode Transistor BLUE ROCKET BRCS4435SC Featuring Low RDS ON and SOP8 Packaging factory
quality P Channel Enhancement Mode Transistor BLUE ROCKET BRCS4435SC Featuring Low RDS ON and SOP8 Packaging factory

P Channel Enhancement Mode Transistor BLUE ROCKET BRCS4435SC Featuring Low RDS ON and SOP8 Packaging

Key Attributes
Model Number: BRCS4435SC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
202pF
Number:
1 P-Channel
Output Capacitance(Coss):
408pF
Input Capacitance(Ciss):
1.604nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
24nC
Mfr. Part #:
BRCS4435SC
Package:
SOP-8
Product Description

Product Overview

The BRCS4435SC is a P-Channel Enhancement Mode Field Effect Transistor designed for power management applications. It features a SOP-8 plastic package and is suitable for use in notebook computers, portable equipment, and battery-powered systems. Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V, a Continuous Drain Current (ID) of -8.8A at 25C, and low On-Resistance (RDS(ON)) of less than 23m at VGS = -10V.

Product Attributes

  • Brand: Fsb (implied by URL fsbrec.com)
  • Package Type: SOP-8 Plastic Package
  • Transistor Type: P-Channel Enhancement Mode Field Effect Transistor

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Ta=25C) -8.8 A
Continuous Drain Current ID (Ta=70C) -7.0 A
Pulsed Drain Current IDM -50 A
Power Dissipation for Single Operation PD (Ta=25) 2.5 W
Power Dissipation for Single Operation PD (Ta=70) 1.2 W
Avalanche Current IAR -20 A
Repetitive avalanche energy EAR 0.3 mJ
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 +150
Thermal Resistance-Junction to Ambient RJA (Ta=25C) 50 /W
Thermal Resistance-Junction to Ambient RJA (Ta=70C) 125 /W
Maximum Junction-to-Lead RJL 25 /W
Drain-Source Breakdown Voltage BVDSS ID=-250A, VGS=0V -30 V
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1.0 A
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V, TJ=55C -5.0 A
Gate-Body leakage current IGSS VDS=0V, VGS=20V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1.0 -1.7 -3.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-8.8A 18 23 m
Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-8.8A, TJ=125C 25 32 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-6.7A 27 35 m
Forward Transconductance gFS VDS=-5V, ID=-8.8A 12 S
Diode Forward Voltage VSD IS=-2.1A, VGS=0V -0.73 -1.2 V
Maximum Body-Diode Continuous Current IS -2.1 A
Total Gate Charge Qg VGS=-5V, VDS=-15V, ID=-8.8A 17 24 nC
Gate-Source Charge Qgs 5 nC
Gate-Drain Charge Qgd 6 nC
Input Capacitance Ciss VGS=0V, VDS=-15V, f=1MHz 1604 pF
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 408 pF
Reverse Transfer Capacitance Crss VGS=0V, VDS=-15V, f=1MHz 202 pF
Turn-on Delay Time td(ON) VGS=-10V, VDS=-15V, ID=-1A, RGEN=6 13 23 ns
Turn-on Rise Time tr VGS=-10V, VDS=-15V, ID=-1A, RGEN=6 13.5 24 ns
Turn-off Delay Time td(OFF) VGS=-10V, VDS=-15V, ID=-1A, RGEN=6 42 68 ns
Turn-off Fall Time tf VGS=-10V, VDS=-15V, ID=-1A, RGEN=6 25 40 ns

2410121250_BLUE-ROCKET-BRCS4435SC_C328568.pdf

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