Switching Application N Channel MOSFET BORN SI2302S with Low RDS on and Compact SOT23 Package Design
Key Attributes
Model Number:
SI2302S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-50℃~+150℃
RDS(on):
48mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
25pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
160pF@10V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
-
Mfr. Part #:
SI2302S
Package:
SOT-23
Product Description
Product Overview
The SI2302S is an N-Channel Enhancement-Mode MOSFET designed for various switching applications. It features low RDS(on) at VGS=4.5V, 3.3V logic-level control, and comes in a Pb-free, RoHS-compliant SOT23 package. Ideal for use as a load switch in DC/DC converters, switching circuits, and LED drivers.
Product Attributes
- Package Type: SOT23
- Material Compliance: PbFree, RoHS Compliant
- MOSFET Type: N-Channel Enhancement-Mode
Technical Specifications
| Model | Package | Marking | Min Unit Quantity | V(BR)DSS (V) | RDS(ON) Typ (m) | VGS for RDS(ON) (V) | ID Max (A) |
|---|---|---|---|---|---|---|---|
| SI2302S | SOT23 | A2sHB | 3000PCS/Reel | 20 | 48 | 4.5 | 3 |
| SI2302S | SOT23 | A2sHB | 3000PCS/Reel | 20 | 55 | 3.3 | 2 |
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Common Ratings (TA=25C Unless Otherwise Noted) | Gate-Source Voltage | 10 | V | |||
| Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 20 | -- | -- | V | |
| Maximum Junction Temperature | 150 | C | ||||
| Storage Temperature Range | -50 | 150 | C | |||
| Pulse Drain Current | Tested | TA=25C | 12.8 | A | ||
| Continuous Drain Current | TA=25C | 3.2 | A | |||
| Continuous Drain Current | TA=70C | 2.5 | A | |||
| Maximum Power Dissipation | TA=25C | 1 | W | |||
| TA=70C | 0.8 | W | ||||
| Thermal Resistance | Junction-Ambient (Mounted on Large Heat Sink) | 125 | C/W | |||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=20V, VGS=0V (TA=25) | -- | -- | 1 | A | |
| Zero Gate Voltage Drain Current | VDS=16V, VGS=0V (TA=125) | -- | -- | 100 | uA | |
| Gate-Body Leakage Current | VGS=10V, VDS=0V | -- | -- | 100 | nA | |
| Gate Threshold Voltage | VDS=VGS, ID=250A | 0.4 | 0.6 | 1.0 | V | |
| Drain-Source On-State Resistance | VGS=4.5V, ID=3A | -- | 48 | 60 | m | |
| Drain-Source On-State Resistance | VGS=3.3V, ID=2A | -- | 55 | 70 | m | |
| Drain-Source On-State Resistance | VGS=2.5V, ID=1A | -- | 66 | 80 | m | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | -- | 160 | -- | pF |
| Output Capacitance | -- | 30 | -- | pF | ||
| Reverse Transfer Capacitance | -- | 25 | -- | pF | ||
| Total Gate Charge | VDS=10V ID=3A, VGS=5V | -- | 4.0 | -- | nC | |
| Gate Source Charge | -- | 0.4 | -- | nC | ||
| Gate Drain Charge | -- | 1.2 | -- | nC | ||
| Switching Characteristics | Turn on Delay Time | VDD=10V, ID=2A, RG=3.3, VGS=4.5V | -- | 8 | -- | ns |
| Turn on Rise Time | -- | 30 | -- | ns | ||
| Turn Off Delay Time | -- | 19 | -- | ns | ||
| Turn Off Fall Time | -- | 28 | -- | ns | ||
| Source Drain Diode Characteristics | Source drain current (Body Diode) | TA=25 | -- | -- | 1.5 | A |
| Forward on voltage | Tj=25, ISD=1A, VGS=0V | -- | 0.82 | 1.2 | V |
2410121503_BORN-SI2302S_C431493.pdf
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