High current N channel MOSFET BLUE ROCKET BRCS020N06SRA with 60V VDS and halogen free TO 220 package

Name: High current N channel MOSFET BLUE ROCKET BRCS020N06SRA with 60V VDS and halogen free TO 220 package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS020N06SRA
Availability: InStock

Key Attributes

Model Number: BRCS020N06SRA

Product Custom Attributes

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

225A

RDS(on):

1.9mΩ@10V;2.5mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

1.6V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

70pF

Output Capacitance(Coss):

1.4nF

Input Capacitance(Ciss):

6.7nF

Pd - Power Dissipation:

125W

Gate Charge(Qg):

60nC@10V

Mfr. Part #:

BRCS020N06SRA

Package:

TO-220

Product Description

Product Overview

The BRCS020N06SRA is a high-performance N-channel MOSFET designed for demanding power applications. Housed in a TO-220 plastic package, this RoHS-compliant (Halogen-Free) device offers a VDS of 60V and a continuous drain current (ID) of 225A. It features low on-state resistance (RDS(on)) at both 10V (2.2m typical 1.9m) and 4.5V (3.5m typical 2.5m), making it ideal for high-efficiency switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts utilizing half-bridge topologies.

Product Attributes

Brand: FS (implied by URL http://www.fsbrec.com)
Product Type: N-CHANNEL MOSFET
Package Type: TO-220 Plastic Package
Compliance: Halogen-Free Product

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Typ	Max
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDSS	60	V
Drain Current	ID(Tc=25)	225	A
Pulsed Drain Current	IDM	646	A
Gate-Source Voltage	VGS	20	V
Single Pulsed Avalanche Energy	EAS	380	mJ	L=0.5mH
Avalanche Current	IAS	30.8	A
Total Power Dissipation	PD(Tc=25)	125	W
Junction and Storage Temperature Range	TJ,TSTG	-55 to 150
Thermal Resistance-Junction to Ambient Steady-State	RJA	50	/W
Thermal Resistance-Junction to Case Steady-State	RJC	0.63	/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	60	V	VGS=0V, ID=250A	60	65
Zero Gate Voltage Drain Current	IDSS		A	VDS=60V, VGS=0V		1
Gate-Body Leakage Current	IGSS		nA	VDS=0V, VGS=20V		100
Gate Threshold Voltage	VGS(th)		V	VDS=VGS, ID=250A	1	1.6	2.5
Static Drain-Source On-Resistance	RDS(on)		m	VGS=10V, ID=10A		1.9	2.2
Static Drain-Source On-Resistance	RDS(on)		m	VGS=4.5V, ID=10A		2.5	3.5
Forward On Voltage	VSD		V	VGS=0V, IS=1A		1.2
Gate resistance	Rg			f=1MHz		1.0
Input Capacitance	Ciss		pF	VDS=25V, VGS=0V, f=1MHz		6700
Output Capacitance	Coss		pF	VDS=25V, VGS=0V, f=1MHz		1400
Reverse Transfer Capacitance	Crss		pF	VDS=25V, VGS=0V, f=1MHz		70
Electrical Characteristics (Ta=25)
Total Gate Charge	Qg(10V)		nC	VGS=10V, VDS=30V, ID=20A		60
Total Gate Charge	Qg(4.5V)		nC	VGS=4.5V, VDS=30V, ID=20A		23
Gate Source Charge	Qgs		nC	VGS=10V, VDS=30V, ID=20A		16
Gate Drain Charge	Qgd		nC	VGS=10V, VDS=30V, ID=20A		3
Turn-On Delay Time	td(on)		ns	VGS=10V, VDS=20V, RL=1, RGEN=3		13
Turn-On Rise Time	tr		ns	VGS=10V, VDS=20V, RL=1, RGEN=3		4
Turn-Off Delay Time	td(off)		ns	VGS=10V, VDS=20V, RL=1, RGEN=3		47
Turn-Off Fall Time	tf		ns	VGS=10V, VDS=20V, RL=1, RGEN=3		6.5

Marking Instructions:

BR: Company Code
020N06S: Product Type Code
****: Lot No. Code (changes with Lot No.)

Resistance to Soldering Heat Test Conditions:

Temperature: 2705
Time: 101 sec.

Packaging Specifications:

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Inner Box Dimensions (mm)	Outer Box Dimensions (mm)
BULK (TO-220/F)	200	10	2,000	5	10,000	237172102	560245195
TUBE (TO-220/F)	50	20	1,000	5	5,000	55516450	575290180

Temperature Profile for Dip Soldering (Pb-Free):

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2555, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

2504101957_BLUE-ROCKET-BRCS020N06SRA_C46962475.pdf

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