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quality Switching Circuit P Channel MOSFET BORN AO3415E with 2KV HMB ESD Protection and SOT 23 Surface Mount factory
quality Switching Circuit P Channel MOSFET BORN AO3415E with 2KV HMB ESD Protection and SOT 23 Surface Mount factory

Switching Circuit P Channel MOSFET BORN AO3415E with 2KV HMB ESD Protection and SOT 23 Surface Mount

Key Attributes
Model Number: AO3415E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.8A
RDS(on):
65mΩ@2.5V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@10V
Number:
1 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
675pF@10V
Gate Charge(Qg):
14.2nC@4.5V
Mfr. Part #:
AO3415E
Package:
SOT-23
Product Description

Product Overview

The AO3415E is a P-Channel MOSFET designed for load switching, switching circuits, and high-speed line drivers. It features HMB ESD Protection of 2KV and is available in a SOT-23 surface mount package. This MOSFET offers low on-state resistance at various gate-source voltages, making it suitable for efficient power management applications.

Product Attributes

  • Brand: (Not explicitly stated, but associated with www.born-tw.com)
  • Package Type: SOT-23
  • ESD Protection: 2KV (HMB)
  • Marking: 3415E

Technical Specifications

Parameter Condition Min Typ Max Unit
Absolute Maximum Ratings
Gate-Source Voltage 8 V
Drain-Source Breakdown Voltage -20 V
Maximum Junction Temperature 150 C
Storage Temperature Range -50 150 C
Pulse Drain Current Tested @TA=25C -30 A
Continuous Drain Current @TA=25C -4.8 A
Continuous Drain Current @TA=70C -3.6 A
Maximum Power Dissipation @TA=25C 1.5 W
Maximum Power Dissipation @TA=70C 1.0 W
Thermal Resistance Junction-Ambient Mounted on Large Heat Sink 80 C/W
Electrical Characteristics
Drain-Source Breakdown Voltage VGS=0V, ID=-250A -20 V
Zero Gate Voltage Drain Current VDS=-20V, VGS=0V @TA=25 -1 A
Zero Gate Voltage Drain Current VDS=-16V, VGS=0V @TA=125 -100 uA
Gate-Body Leakage Current VGS=8V, VDS=0V 10 A
Gate Threshold Voltage VDS=VGS, ID=-250A -0.4 -0.7 -1.2 V
Drain-Source On-State Resistance VGS=-4.5V, ID=-4A 37 45 m
Drain-Source On-State Resistance VGS=-3.3V, ID=-3A 43 55 m
Drain-Source On-State Resistance VGS=-2.5V, ID=-2A 52 65 m
Dynamic Electrical Characteristics
Input Capacitance VDS=-10V, VGS=0V, f=1MHz 675 pF
Output Capacitance 120 pF
Reverse Transfer Capacitance 85 pF
Total Gate Charge VDS=-10V, ID=-4A, VGS=-4.5V 14.2 nC
Gate Source Charge 3.2 nC
Gate Drain Charge 5.8 nC
Switching Characteristics
Turn on Delay Time VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V 15 ns
Turn on Rise Time 11 ns
Turn Off Delay Time 22 ns
Turn Off Fall Time 35 ns
Source Drain Diode Characteristics
Source drain current TA=25 -2 A
Forward on voltage Tj=25, ISD=-2A, VGS=0V -0.83 -1.2 V
Ordering Information
Order Code Package Base Qty Delivery Mode Marking
AO3415E SOT-23 3K Tape and reel 3415E

2410122018_BORN-AO3415E_C2997267.pdf

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