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quality BLUE ROCKET BR4953D E Dual P Channel MOSFET with Ruggedness and Reliability in SOP 8 Plastic Package factory
quality BLUE ROCKET BR4953D E Dual P Channel MOSFET with Ruggedness and Reliability in SOP 8 Plastic Package factory

BLUE ROCKET BR4953D E Dual P Channel MOSFET with Ruggedness and Reliability in SOP 8 Plastic Package

Key Attributes
Model Number: BR4953D-E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
-
Input Capacitance(Ciss):
415pF
Output Capacitance(Coss):
223pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BR4953D-E
Package:
SOP-8
Product Description

Product Overview

The BR4953D is a Dual P-Channel MOSFET in a SOP-8 plastic package. It features a super high-density cell design for low RDS(ON), offering ruggedness and reliability. This HF product is designed for power management applications in notebook computers, portable equipment, and battery-powered systems.

Product Attributes

  • Brand: fsbrec
  • Package Type: SOP-8 Plastic Package
  • Product Type: Dual P-Channel MOSFET
  • Features: Super high dense cell design, low RDS(ON), Rugged and reliable, HF Product (Halogen-Free)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID* -3.0 A
Pulsed Drain Current IDM* -12 A
Diode Continuous Forward Current IS* -2.0 A
Power Dissipation for Single Operation PD* (Ta=25) 2 W
Power Dissipation for Single Operation PD* (Ta=100) 0.8 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance-Junction to Ambient RJA* (Surface Mounted on 1in pad area, t 10sec.) 62.5 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250A -20 V
Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 A
Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V, TJ=85C -10 A
Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250A -0.50 -0.8 -1.0 V
Gate Leakage Current IGSS VGS=12V, VDS=0V 100 nA
Drain-Source On-state Resistance RDS(ON) a VGS=-10V, IDS=-2.7A 85 97 m
Drain-Source On-state Resistance RDS(ON) a VGS=-4.5V, IDS=-2.7A 82 110 m
Drain-Source On-state Resistance RDS(ON) a VGS=-2.5V, IDS=-2.2A 130 150 m
Diode Forward Voltage VSD a VGS=0V, ISD=-1.0A -0.7 -1.3 V
Total Gate Charge Qg b VDS=-6V, VGS=-4.5V, IDS=-2.7A 5.8 10 nC
Gate-Source Charge Qgs b 0.85 nC
Gate-Drain Charge Qgd b 1.7 nC
Electrical Characteristics (Ta=25)
Gate Resistance RG b VGS=0V, VDS=0V, F=1MHz 6
Input Capacitance Ciss b VGS=0V, VDS=-6V, Frequency=1.0MHz 415 pF
Output Capacitance Coss b 223 pF
Reverse Transfer Capacitance Crss b 84 pF
Turn-on Delay Time td(ON) b VDD=-6V, RL=6, IDS=-1A, VGEN=-10V, RG=6 13 25 ns
Turn-on Rise Time Tr b 36 60 ns
Turn-off Delay Time Td(OFF) b 42 70 ns
Turn-off Fall Time Tf b 34 60 ns
Package Dimensions
SOP-8
Packaging Specifications
Package Type Dimension Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box
SOP/ESOP-8 13"12" 4,000 2 8,000 6 48,000

Notes:

  • * Surface Mounted on 1in pad area, t 10sec.
  • a : Pulse test; pulse width300s, duty cycle2%.
  • b : Guaranteed by design, not subject to production testing.

2410121242_BLUE-ROCKET-BR4953D-E_C22356972.pdf

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