N Channel MOSFET BORN BMI03N820 Designed for Power Factor Correction and Switched Mode Power Supplies
Key Attributes
Model Number:
BMI03N820
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
45A
RDS(on):
8.2mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
860pF@15V
Gate Charge(Qg):
18.8nC@10V
Mfr. Part #:
BMI03N820
Package:
TO-252-2
Product Description
Product Overview
The BMI03N820 is an N-Channel MOSFET utilizing advanced trench technology and design to achieve excellent RDS(on) with low gate charge. This MOSFET is suitable for a wide range of applications, including power factor correction (PFC), switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and LED lighting power.
Product Attributes
- Brand: BN (implied from product name BMI03N820)
- Product Type: N-Channel MOSFET
- Technology: Advanced Trench Technology
- Package: TO-252-2L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| General Description | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Drain Current | ID | TC=25C | 45 | A | ||
| Drain Current | ID | TC=100C | 29 | A | ||
| Drain Current-Pulse | IDM | (1) | 180 | A | ||
| Power Dissipation | PD | TC=25C | 45 | W | ||
| Derate above 25C | 0.35 | W/C | ||||
| Single Pulsed Avalanche Energy | EAS | (2) | 90 | mJ | ||
| Operation Junction Temperature Range | TJ | -55 | +150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds | TL | 300 | C | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | C/W | |||
| Thermal Resistance From Junction to Case | RJC | 2.0 | C/W | |||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS = 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID=250uA | 1.0 | 1.5 | 1.8 | V |
| Static Drain-source On Resistance | RDS(ON) | VGS=10V, ID=15A | 8.2 | 11.0 | m | |
| Static Drain-source On Resistance | RDS(ON) | VGS=4.5V, ID=10A | 14.5 | 20.0 | m | |
| Input Capacitance | Ciss | VDS =15V, VGS =0V, f = 1MHz | 860 | pF | ||
| Output Capacitance | Coss | 145 | pF | |||
| Reverse Transfer Capacitance | Crss | 110 | pF | |||
| Gate Resistance | Rg | VGS=0V, f=1MHz | 1 | 3 | 10 | |
| Turn-on Delay time | Td(on) | VDD=20V, VGS=10V, RG =6, ID =15A | 6.2 | ns | ||
| Turn-on Rise time | Tr | 31.5 | ns | |||
| Turn-Off Delay Time | Td(off) | 38.6 | ns | |||
| Turn-Off Fall time | Tf | 13.5 | ns | |||
| Gate to Drain Charge | Qg | VDS=15V, VGS=10V, ID=15A | 18.8 | nC | ||
| Gate to Source Charge | Qgs | 6.9 | nC | |||
| Gate to Drain Charge | Qgd | 4.3 | nC | |||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | 0.88 | 1.2 | V | |
| Continuous Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | 45 | A | ||
| Pulsed Sourse Current | ISM | 180 | A | |||
| Reverse Recovery Time | Trr | IF=15A, dIF/dt=100A/s | 48 | ns | ||
| Reverse Recovery Charge | Qrr | 52 | nC | |||
Notes:
- (1) Pulse width limited by maximum junction temperature.
- (2) L=0.5mH, VDD=15V, VG=10V, RG=25, starting TJ=25C.
- (3) Pulse Test: Pulse Width 300s, Duty cycle 2%.
- (4) Essentially independent of operating temperature.
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2411191600_BORN-BMI03N820_C42387581.pdf
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