20V Complementary Enhancement Mode MOSFET BORN BM4608B Featuring N Channel and P Channel Load Switch
Key Attributes
Model Number:
BM4608B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.8A;4.2A
RDS(on):
32mΩ@10V;30mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
16nC@6V;42nC@6V
Mfr. Part #:
BM4608B
Package:
SOT-23-6L
Product Description
Product Overview
The BM4608B is a 20V complementary enhancement-mode MOSFET from BORN SEMICONDUCTOR, INC. It features low gate charge and is suitable for use in PWM applications and as a load switch. This device offers both N-Channel and P-Channel MOSFETs in a single package, providing complementary functionality.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Model: BM4608B
- Type: Complementary Enhancement-Mode MOSFET
- Package: SOT23-6L
- Marking: 4608B
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
General Features:
| Feature | N-Channel | P-Channel |
|---|---|---|
| VDS | 20V | -20V |
| RDS(ON) @VGS=10V (MAX) | 42m | 42m |
| RDS(ON) @VGS=4.5V (MAX) | 45m | 45m |
Absolute Maximum Ratings (@TA=25C unless otherwise noted):
| Symbol | Parameter | N-Channel Value | P-Channel Value | Units |
|---|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | -20 | V |
| VGS | Gate-Source Voltage | 12 | 12 | V |
| ID | Continuous Drain Current (TA = 25C) | 3.8 | -4.2 | A |
| ID | Continuous Drain Current (TA = 75C) | 2.3 | -2.5 | A |
| IDM | Pulsed Drain Current(1) | 10 | -12 | A |
| PD | Maximum Power Dissipation (TA = 25C) | 1.25 | 1.25 | W |
| PD | Maximum Power Dissipation (TA = 75C) | 0.75 | 0.75 | W |
| TJ,Tstg | Operating junction and storage temperature range | -55 to +150 | C | |
Thermal Characteristics:
| Symbol | Parameter | N-Channel Max. Units | P-Channel Max. Units |
|---|---|---|---|
| RJA | Junction-to-Ambient (t10s) | 100 C/W | 100 C/W |
| RJA | Junction-to-Ambient (Steady-State) | 130 C/W | 130 C/W |
| RJL | Junction-to-Lead (Steady-State) | 90 C/W | 90 C/W |
N-Channel Electrical Characteristics (@TA=25C unless otherwise noted):
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| OFF Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 20V, VGS = 0V | 1 | uA | ||
| IGSS | Gate Body Leakage Current | VGS = 12V, VDS = 0V | 100 | nA | ||
| ON Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 0.4 | 1.0 | V | |
| RDS(on) | Drain-Source On-State Resistance | VGS = 10V, ID = 3A | 32 | 42 | m | |
| RDS(on) | Drain-Source On-State Resistance | VGS = 4.5V, ID = 2.5A | 35 | 45 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 10V, VGS = 0V, f = 1.0MHz | 750 | pF | ||
| Coss | Output Capacitance | VDS = 10V, VGS = 0V, f = 1.0MHz | 100 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS = 10V, VGS = 0V, f = 1.0MHz | 73 | pF | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 | 15 | ns | ||
| tr | Turn-On Rise Time | VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 | 6 | ns | ||
| td(off) | Turn-Off Delay Time | VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 | 26 | ns | ||
| tf | Turn-Off Fall Time | VDD = 10V, ID = 3A, VGS = 6V, RGEN = 3 | 12 | ns | ||
| Qg | Total Gate Charge | VDS = 10V, ID = 3A, VGS = 6V | 16 | nC | ||
| Qgs | Gate-Source Charge | VDS = 10V, ID = 3A, VGS = 6V | 2.8 | nC | ||
| Qgd | Gate-Drain Charge | VDS = 10V, ID = 3A, VGS = 6V | 4.1 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | IS = 1A, VGS = 0V | 1.2 | V | ||
| IS | Maximum Diode Continuous Current | IS = 1A, VGS = 0V | 2.0 | A | ||
P-Channel Electrical Characteristics (@TA=25C unless otherwise noted):
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| OFF Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250uA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | -1 | uA | ||
| IGSS | Gate Body Leakage Current | VGS = 12V, VDS = 0V | 100 | nA | ||
| ON Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250uA | -0.4 | -1.0 | V | |
| RDS(on) | Drain-Source On-State Resistance | VGS = -10V, ID = -3A | 30 | 42 | m | |
| RDS(on) | Drain-Source On-State Resistance | VGS = -4.5V, ID = -2.5A | 32 | 45 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | 1022 | pF | ||
| Coss | Output Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | 152 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | 164 | pF | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 | 16 | ns | ||
| tr | Turn-On Rise Time | VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 | 6.8 | ns | ||
| td(off) | Turn-Off Delay Time | VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 | 32 | ns | ||
| tf | Turn-Off Fall Time | VDD = -10V, ID = -3A, VGS = -6V, RGEN = 6 | 12 | ns | ||
| Qg | Total Gate Charge | VDS = -10V, ID = -3A, VGS = -6V | 42 | nC | ||
| Qgs | Gate-Source Charge | VDS = -10V, ID = -3A, VGS = -6V | 7 | nC | ||
| Qgd | Gate-Drain Charge | VDS = -10V, ID = -3A, VGS = -6V | 9 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | IS = -1A, VGS = 0V | -1.2 | V | ||
| IS | Maximum Diode Continuous Current | IS = -1A, VGS = 0V | -2.0 | A | ||
Ordering Information:
| Order Code | Package | Marking | Base Qty | Delivery Mode |
|---|---|---|---|---|
| BM4608B | SOT23-6L | 4608B | 3K | Tape and reel |
Package Outline Drawing - SOT23-6L:
| SYMBOL | MILLIMETER MIN | MILLIMETER MAX | INCHES MIN | INCHES MAX |
|---|---|---|---|---|
| A | 1.050 | 1.250 | 0.041 | 0.049 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 1.050 | 1.150 | 0.041 | 0.045 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| C | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 2.820 | 3.020 | 0.111 | 0.119 |
| E1 | 1.500 | 1.700 | 0.059 | 0.067 |
| E | 2.650 | 2.950 | 0.104 | 0.116 |
| e | 0.950(BSC) | 0.037(BSC) | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.600 | 0.012 | 0.024 |
| 0 | 8 | 0 | 8 | |
Packaging Tape - SOT23-6L:
| SYMBOL | MILLIMETER |
|---|---|
| A0 | 3.250.1 |
| B0 | 3.30.1 |
| d0 | 1.550.1 |
| d1 | 1.00.1 |
| E | 1.750.1 |
| F | 3.500.1 |
| K0 | 1.380.1 |
| P | 4.000.1 |
| P0 | 4.000.1 |
| P1 | 2.000.1 |
| W | 8.000.2 |
| T | 0.20.02 |
Packaging Reel:
| SYMBOL | MILLIMETER |
|---|---|
| A | 177.80.2 |
| B | 2.70.2 |
| C | 13.50.2 |
| D | 9.60.3 |
| E | 54.50.2 |
| F | 12.30.3 |
| T1 | 1.00.2 |
| Quantity | 3000PCS |
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2505301710_BORN-BM4608B_C49009909.pdf
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