N Channel MOSFET BLUE ROCKET BRCS080N10SHDP with Halogen Free Package and Fast Switching Performance

Name: N Channel MOSFET BLUE ROCKET BRCS080N10SHDP with Halogen Free Package and Fast Switching Performance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS080N10SHDP
Availability: InStock

Key Attributes

Model Number: BRCS080N10SHDP

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

68A

RDS(on):

7mΩ@10V

Gate Threshold Voltage (Vgs(th)):

2.9V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

110pF

Output Capacitance(Coss):

1.25nF

Input Capacitance(Ciss):

2.5nF

Gate Charge(Qg):

25nC@10V

Mfr. Part #:

BRCS080N10SHDP

Package:

TO-252

Product Description

Product Overview

The BRCS080N10SHDP is an N-channel MOSFET designed for low-voltage applications and high-efficiency power conversion. It features low RDS(on), low gate charge, and low Crss, contributing to fast switching speeds. This HF product is particularly suited for automotive circuits, DC/DC converters, and power management in portable and battery-operated devices, meeting stringent automotive application requirements.

Product Attributes

Brand: FSBREC
Product Type: N-Channel MOSFET
Package Type: TO-252 Plastic Package
Certifications/Features: HF Product, Halogen-Free
Marking Code: BR (Company Code), 080N10SH (Product Type Code), **** (Lot No. Code)

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Drain-Source Voltage	VDS	100	V
Drain Current - Continuous	ID	68	A
Drain Current Pulsed	IDM	156	A
Gate-Source Voltage	VGS	20	V
Power Dissipation (Tc=25)	PD(Tc=25)	75	W
Single Pulse Avalanche Energy (L=0.5mH)	EAS	119	mJ
Avalanche Current (L=0.5mH)	IAS	18.5	A
Junction and Storage Temperature Range	Tj, Tstg	-55 to 150
Thermal resistance, junction - ambient (t 10s)	RJA	20	/ W
Thermal resistance, junction - ambient (Steady-State)	RJA	50	/ W
Thermal resistance, junction - case (Steady-State)	RJC	1.7	/ W

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	100	109		V
Zero Gate Voltage Drain Current	IDSS	VDS=100V, VGS=0V			1.0	A
Gate-Body Leakage Current	IGSS	VGS=20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	2	2.9	4	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=30A		7	8	m
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=1A			1.2	V
Gate resistance	Rg	VGS=0V, VDS=0V, f=1MHz		3.1
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1.0MHz		2500		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1.0MHz		1250		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1.0MHz		110		pF
Total Gate Charge	Qg	VGS=10V, VDS=50V, ID=20A		25		nC
Gate Source Charge	Qgs	VGS=10V, VDS=50V, ID=20A		6		nC
Gate Drain Charge	Qg	VGS=10V, VDS=50V, ID=20A		3.5		nC

Switching Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Typ	Unit
Turn-On Delay Time	td(on)	VGS=10V, VDS=50V, RL=2.5, RGEN=3	8.5	ns
Turn-On Rise Time	tr	VGS=10V, VDS=50V, RL=2.5, RGEN=3	3	ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=50V, RL=2.5, RGEN=3	23	ns
Turn-Off Fall Time	tf	VGS=10V, VDS=50V, RL=2.5, RGEN=3	3.5	ns

Package Dimensions

See attached diagram for TO-252 package dimensions.

Packaging Specifications

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (Reel)	Dimension (Inner Box)	Dimension (Outer Box)
TO-252 (Reel)	2,500	2	5,000	6	30,000	1316	36036050	380335366
TO-251/252 (Tube)	75	48	3,600	5	18,000		52620.55.25	575290180

Soldering Profile

IR Reflow Soldering (Pb-Free):

Preheating: 150~180, 60~90 seconds
Peak Temperature: 2455, Duration: 50.5 seconds
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

Temperature: 2605
Time: 101 seconds

2504101957_BLUE-ROCKET-BRCS080N10SHDP_C46962491.pdf

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