Low On Resistance N Channel MOSFET BORN 2SK3018W Suitable for Portable Equipment and Drive Circuits
Key Attributes
Model Number:
2SK3018W
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
RDS(on):
13Ω@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Reverse Transfer Capacitance (Crss@Vds):
4pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2SK3018W
Package:
SOT-323
Product Description
Product Overview
The 2SK3018W is an N-Channel MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. This device is also easy to parallel, offering flexibility in circuit design.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Model: 2SK3018W
- Type: N-Channel MOSFET
- Marking: KN
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | 0.1 | A | |||
| PD | Power Dissipation | 0.2 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| RJA | Thermal Resistance from Junction to Ambient | 625 | /W | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 10µA | 30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS =30V,VGS = 0V | 0.2 | µA | ||
| IGSS | Gate Source leakage current | VGS = ±20V, VDS = 0V | ±500 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS = 3V, ID =100µA | 0.8 | 1.5 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS = 4V, ID =10mA | 8 | Ω | ||
| RDS(on) | Drain-Source On-Resistance | VGS =2.5V,ID =1mA | 13 | Ω | ||
| gFS | Forward Transconductance | VDS =3V, ID = 10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Ciss | Input Capacitance | 13 | pF | |||
| Coss | Output Capacitance | 9 | pF | |||
| Crss | Reverse Transfer Capacitance | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Switching Characteristics* | ||||||
| td(on) | Turn-On Delay Time | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 15 | ns | ||
| tr | Rise Time | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 35 | ns | ||
| td(off) | Turn-Off Delay Time | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 80 | ns | ||
| tf | Fall Time | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 80 | ns | ||
| *These parameters have no way to verify. | ||||||
| Package Information | ||||||
| Package Type | Dimensions (mm) | |||||
| SOT-323 | A: 1.1, A1: 0.1, B: 2.2, c: 0.23, D: 0.8, E: 1.3, e: 1.3, e1: 0.4, HE: 2.0, Lp: 1.15, Q: 0.2, v: 0.13, w: 0.2, bp: 0.45, M: 0.15 | |||||
2410121615_BORN-2SK3018W_C22469028.pdf
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