P Channel Enhancement Mode MOSFET BORN BML6402 with Ultra Low On Resistance SOT 23 Package
Key Attributes
Model Number:
BML6402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Number:
1 P-Channel
Input Capacitance(Ciss):
600pF@10V
Pd - Power Dissipation:
1.1W
Mfr. Part #:
BML6402
Package:
SOT-23
Product Description
Product Overview
The BML6402 is a P-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This ROHS-compliant MOSFET is supplied in a SOT-23 package, making it suitable for various electronic applications requiring efficient power switching.
Product Attributes
- Brand: BML (implied by model number BML6402)
- Technology: Advanced trench process
- Cell Design: High Density Cell Design
- Mode: P-Channel Enhancement-Mode
- Compliance: ROHS
- Package: SOT-23
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -1.2 | V | |
| Diode Forward Voltage Drop | VSD | -1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | ||
| Zero Gate Voltage Drain Current (TA=70) | IDSS | -25 | uA | ||
| Gate Body Leakage | IGSS | +100 | nA | ||
| Static Drain-Source On-State Resistance (ID= -3.7A,VGS= -4.5V) | RDS(ON) | 65 | m | ||
| Static Drain-Source On-State Resistance (ID= -3.1A,VGS= -2.5V) | RDS(ON) | 135 | m | ||
| Input Capacitance | CISS | 600 | pF | ||
| Output Capacitance | COSS | 120 | pF | ||
| Turn-ON Time | t(on) | 8 | ns | ||
| Turn-OFF Time | t(off) | 60 | ns | ||
| Drain-Source Voltage | BVDSS | -20 | V | ||
| Gate-Source Voltage | VGS | +12 | V | ||
| Drain Current (continuous) | ID | -3.7 | A | ||
| Drain Current (pulsed) | IDM | -15 | A | ||
| Total Device Dissipation (TA=25) | PD | 1100 | mW | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | +150 |
2410121914_BORN-BML6402_C306860.pdf
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