Complementary MOSFET BORN BMI404D1538 Suitable for SMPS UPS and LED Lighting Applications
Key Attributes
Model Number:
BMI404D1538
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A;18A
RDS(on):
12mΩ@10V;28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.9V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
142pF;125pF
Input Capacitance(Ciss):
1.512nF;1.217nF
Pd - Power Dissipation:
35W
Output Capacitance(Coss):
208pF;198pF
Gate Charge(Qg):
23nC@10V;23.5nC@10V
Mfr. Part #:
BMI404D1538
Package:
TO-252-4L
Product Description
Product Overview
The BMI404D1538 is a complementary N+P-Channel MOSFET designed with advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power factor correction (PFC), switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and LED lighting power. This MOSFET is provided in a TO-252-4L package.
Product Attributes
- Brand: BOR-TW (implied by URL)
- Package Type: TO-252-4L
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| BMI404D1538 (N-Channel) | Drain-Source Breakdown Voltage (V(BR)DSS) | VGS = 0, ID=250uA | 40 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 40V, VGS=0 | 1 | uA | |||
| Gate-Body Leakage Current (IGSS) | VGS = 20V, VDS=0 | 100 | nA | |||
| Gate Threshold Voltage (VGS(TH)) | VGS = VDS, ID=250uA | 1.5 | 1.9 | 2.5 | V | |
| Static Drain-source On Resistance (RDS(ON)) | VGS=10V, ID=8A | 12 | 15 | m | ||
| Static Drain-source On Resistance (RDS(ON)) | VGS=4.5V, ID=4A | 17 | 25 | m | ||
| Forward Transconductance (gfs) | VDS=5V, ID=10A | 10 | 14.7 | 20 | S | |
| Input capacitance (Ciss) | VDS =20V, VGS =0V, f = 1MHz | 1512 | pF | |||
| Output capacitance (Coss) | VDS =20V, VGS =0V, f = 1MHz | 208 | pF | |||
| Reverse transfer capacitance (Crss) | VDS =20V, VGS =0V, f = 1MHz | 142 | pF | |||
| Gate to Source Charge (Qg) | VDS=20V, VGS=10V, ID=10A | 23 | nC | |||
| Gate to Source Charge (Qgs) | VDS=20V, VGS=10V, ID=10A | 5.1 | nC | |||
| Gate to Drain Charge (Qgd) | VDS=20V, VGS=10V, ID=10A | 4.6 | nC | |||
| BMI404D1538 (P-Channel) | Drain-Source Breakdown Voltage (V(BR)DSS) | VGS = 0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-40V, VGS=0V | -1 | uA | |||
| Gate-Body Leakage Current (IGSS) | VGS = 20V, VDS=0V | 100 | nA | |||
| Gate Threshold Voltage (VGS(TH)) | VGS = VDS, ID=-250uA | -1.5 | -1.9 | -2.4 | V | |
| Static Drain-source On Resistance (RDS(ON)) | VGS=-10V, ID=-8A | 28 | 38 | m | ||
| Static Drain-source On Resistance (RDS(ON)) | VGS=-4.5V, ID=-4A | 38 | 52 | m | ||
| Forward Transconductance (gfs) | VDS=-5V, ID=-10A | 12 | 16.8 | 22 | S | |
| Input capacitance (Ciss) | VDS =-20V, VGS =0V, f = 1MHz | 1217 | pF | |||
| Output capacitance (Coss) | VDS =-20V, VGS =0V, f = 1MHz | 198 | pF | |||
| Reverse transfer capacitance (Crss) | VDS =-20V, VGS =0V, f = 1MHz | 125 | pF | |||
| Gate to Source Charge (Qg) | VDS=-20V, VGS=-10V, ID=-7A | 23.5 | nC | |||
| Gate to Source Charge (Qgs) | VDS=-20V, VGS=-10V, ID=-7A | 3.7 | nC | |||
| Gate to Drain Charge (Qgd) | VDS=-20V, VGS=-10V, ID=-7A | 3.1 | nC | |||
| Absolute Maximum Ratings | Parameter | N-Channel | P-Channel | Units | ||
| Drain-Source Breakdown Voltage (V(BR)DSS) | 40 | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | 20 | V | |||
| Continuous Drain Current (ID) TC=25C | 30 | -18 | A | |||
| Pulse Drain Current (IDM) | 120 | -72 | A | |||
| Power Dissipation (PD) TC=25C | 35 | W | ||||
| Junction and Storage Temperature Range (TJ, Tstg) | -55 to +150 | C | ||||
| Max. Lead Temp. for Soldering (TL) | 300 | C | ||||
| Thermal Resistance (RJC) | 3.5 | C/W | ||||
| Thermal Resistance (RJA) | 62.5 | C/W | ||||
2508151650_BORN-BMI404D1538_C50338768.pdf
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