N channel MOSFET BLUE ROCKET BRCS020N03RA in TO 220 package for power factor correction and lamp ballasts

Key Attributes
Model Number: BRCS020N03RA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
217A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
460pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
5.7nF@25V
Pd - Power Dissipation:
150W
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
BRCS020N03RA
Package:
TO-220
Product Description

Product Overview

The BRCS020N03RA is an N-channel MOSFET housed in a TO-220 plastic package. It features ultra-low on-resistance and fast switching speeds, making it well-suited for high-efficiency switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts based on half-bridge topology.

Product Attributes

  • Brand: Fsb (implied by URL http://www.fsbrec.com)
  • Package Type: TO-220 Plastic Package
  • Channel Type: N-Channel MOSFET
  • Marking Code: BR, 020N03, Lot No. Code

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS 30 V
Drain Current (Tc=25) ID(Tc=25) 217 A
Pulsed Drain Current IDM 770 A
Gate-Source Voltage VGS ±20 V
Single Pulsed Avalanche Energy (L=0.5mH) EAS 590 mJ
Avalanche Current IAS 33.5 A
Total Power Dissipation (Tc=25) PD(Tc=25) 150 W
Junction and Storage Temperature Range TJ,TSTG -55 150
Thermal Resistance-Junction to Ambient (t ≤ 10s) RJA 60 /W
Thermal Resistance-Junction to Case (Steady-State) RJC 0.8 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 30 35 V
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA
Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1 1.5 3 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 1.8 2
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 2.5 3
Forward On Voltage VSD VGS=0V, IS=1A 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 5700 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz 610 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz 460 pF
Gate resistance Rg f=1MHz 1.5 Ω
Total Gate Charge (10V) Qg(10V) VGS=10V, VDS=20V, ID=20A 67 nC
Total Gate Charge (4.5V) Qg(4.5V) VGS=4.5V, VDS=20V, ID=10A 29 nC
Gate Source Charge Qgs VGS=10V, VDS=20V, ID=20A 16.7 nC
Gate Drain Charge Qgd VGS=10V, VDS=20V, ID=20A 4.8 nC
Turn-On Delay Time td(on) VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 12.7 ns
Turn-On Rise Time tr VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 9.5 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 58 ns
Turn-Off Fall Time tf VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 11 ns

Packaging Information

Bulk Package

Package Type Units/Bag Bags/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Bag Dimensions (mm³) Inner Box Dimensions (mm) Outer Box Dimensions (mm)
TO-220/F 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195

Tube Package

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Tube Dimensions (mm) Inner Box Dimensions (mm) Outer Box Dimensions (mm)
TO-220/F 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180

Soldering Information

Temperature Profile for Dip Soldering (Pb-Free)

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 255±5, Duration: 5±0.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temperature: 270±5
  • Time: 10±1 sec.

2410121234_BLUE-ROCKET-BRCS020N03RA_C22449012.pdf

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