Power Switch N Channel MOSFET BORN BMF10N70G with 700V Voltage and Low Gate Charge Characteristics
Key Attributes
Model Number:
BMF10N70G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.31Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
1.9nF
Gate Charge(Qg):
21.5nC@10V
Mfr. Part #:
BMF10N70G
Package:
TO-220F
Product Description
Product Overview
The BMx10N70 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It offers a high breakdown voltage of 700V and a continuous drain current of 10A, with a typical on-resistance of 1.05 at VGS=10V. Key features include fast switching and low gate charge, making it suitable for efficient power conversion applications. Available in TO-220AB, TO-220F, TO-263, and TO-252 packages.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Line: BMx10N70
- Type: N-Channel MOSFET
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Compliance: EU RoHS 2011/65/EU directive
- Lead Status: Lead free
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) @VGS=10V () Typ. | Power Dissipation (W) | Junction Temperature (C) | Storage Temperature (C) |
|---|---|---|---|---|---|---|---|
| BMx10N70 | TO-220AB | 700 | 10 | 1.05 | 110 | 150 | -55 to +150 |
| BMx10N70 | TO-263 | 700 | 10 | 1.05 | 110 | 150 | -55 to +150 |
| BMx10N70 | TO-220F | 700 | 10 | 1.05 | 30 | 150 | -55 to +150 |
| BMx10N70 | TO-252 | 700 | 10 | 1.05 | 110 | 150 | -55 to +150 |
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID=250uA | 700 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 700V, VGS=0V | - | - | 1 | A |
| Gate-Source Leakage Current (IGSS) | VGS = 30V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage (VGS(TH)) | VGS = VDS, ID=250uA | 2 | - | 4 | V |
| Static Drain-source On Resistance (RDS(on)) | VGS=10V, ID=5A | - | 1.05 | 1.31 | |
| Forward Transconductance (gfs) | VDS=15V, ID=5A | - | 9.5 | - | S |
| Input capacitance (Ciss) | VDS = 2V, VGS =0V, f = 200kHz | - | 1900 | - | pF |
| Output capacitance (Coss) | VDS = 2V, VGS =0V, f = 200kHz | - | 134 | - | pF |
| Reverse transfer capacitance (Crss) | VDS = 2V, VGS =0V, f = 200kHz | - | 6 | - | pF |
| Diode Forward Voltage (VSD) | ISD=10A | - | - | 1.4 | V |
| Ordering Information | Package | Base Qty | Delivery Mode |
|---|---|---|---|
| BME10N70/G | TO-220AB | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMF10N70/G | TO-220F | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMK10N70/G | TO-263 | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMK10N70-R/G | TO-263 | 800pcs/reel | 800pcs/box, 4kpcs/carton |
| BMI10N70/G | TO-252 | 2500pcs/reel | 5kpcs/box, 25kpcs/carton |
Note: Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2412021443_BORN-BMF10N70G_C42402382.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
